JPS51115770A - Annealing method after ion injection - Google Patents

Annealing method after ion injection

Info

Publication number: JPS51115770A
Authority: JP; Japan
Prior art keywords: ion injection; annealing method; injection; rid; eliminate
Prior art date: 1975-04-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP4103075A

Other languages

English (en)

Other versions

JPS5740648B2 (ja

Inventor

Yasuo Tanii

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sanyo Electric Co Ltd

Original Assignee

Sanyo Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-04-03

Filing date

1975-04-03

Publication date

1976-10-12

1975-04-03 Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd

1975-04-03 Priority to JP4103075A priority Critical patent/JPS51115770A/ja

1976-10-12 Publication of JPS51115770A publication Critical patent/JPS51115770A/ja

1982-08-28 Publication of JPS5740648B2 publication Critical patent/JPS5740648B2/ja

Status Granted legal-status Critical Current

Links

238000002347 injection Methods 0.000 title abstract 3
239000007924 injection Substances 0.000 title abstract 3
238000000137 annealing Methods 0.000 title abstract 2
238000000034 method Methods 0.000 title abstract 2
239000006185 dispersion Substances 0.000 abstract 1
239000000463 material Substances 0.000 abstract 1
239000004065 semiconductor Substances 0.000 abstract 1

Landscapes

Inorganic Insulating Materials (AREA)

JP4103075A 1975-04-03 1975-04-03 Annealing method after ion injection Granted JPS51115770A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP4103075A JPS51115770A (en)	1975-04-03	1975-04-03	Annealing method after ion injection

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP4103075A JPS51115770A (en)	1975-04-03	1975-04-03	Annealing method after ion injection

Publications (2)

Publication Number	Publication Date
JPS51115770A true JPS51115770A (en)	1976-10-12
JPS5740648B2 JPS5740648B2 (ja)	1982-08-28

Family

ID=12596989

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4103075A Granted JPS51115770A (en)	1975-04-03	1975-04-03	Annealing method after ion injection

Country Status (1)

Country	Link
JP (1)	JPS51115770A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5556637A (en) *	1978-10-20	1980-04-25	Matsushita Electric Ind Co Ltd	Preparation of semiconductor device
JPS5873112A (ja) *	1981-10-28	1983-05-02	Nippon Hoso Kyokai <Nhk>	レ−ザアニ−ル方法
JPS60239030A (ja) *	1984-05-11	1985-11-27	Sumitomo Electric Ind Ltd	化合物半導体のアニ−ル法
JPS6211225A (ja) *	1986-07-18	1987-01-20	Sony Corp	３−ｖ族化合物半導体の熱処理法
JPH05129203A (ja) *	1991-11-07	1993-05-25	Japan Steel Works Ltd:The	エピタキシヤル薄膜の形成方法

1975
- 1975-04-03 JP JP4103075A patent/JPS51115770A/ja active Granted

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5556637A (en) *	1978-10-20	1980-04-25	Matsushita Electric Ind Co Ltd	Preparation of semiconductor device
JPS5873112A (ja) *	1981-10-28	1983-05-02	Nippon Hoso Kyokai <Nhk>	レ−ザアニ−ル方法
JPS60239030A (ja) *	1984-05-11	1985-11-27	Sumitomo Electric Ind Ltd	化合物半導体のアニ−ル法
JPS6211225A (ja) *	1986-07-18	1987-01-20	Sony Corp	３−ｖ族化合物半導体の熱処理法
JPH05129203A (ja) *	1991-11-07	1993-05-25	Japan Steel Works Ltd:The	エピタキシヤル薄膜の形成方法

Also Published As

Publication number	Publication date
JPS5740648B2 (ja)	1982-08-28

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