JPS51137384A - Semi conductor device manufacturing method - Google Patents

Semi conductor device manufacturing method

Info

Publication number
JPS51137384A
JPS51137384A JP6108575A JP6108575A JPS51137384A JP S51137384 A JPS51137384 A JP S51137384A JP 6108575 A JP6108575 A JP 6108575A JP 6108575 A JP6108575 A JP 6108575A JP S51137384 A JPS51137384 A JP S51137384A
Authority
JP
Japan
Prior art keywords
device manufacturing
conductor device
semi conductor
manufacturing
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6108575A
Other languages
English (en)
Inventor
Kazuyuki Saito
Katsumi Murase
Michiyuki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6108575A priority Critical patent/JPS51137384A/ja
Publication of JPS51137384A publication Critical patent/JPS51137384A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP6108575A 1975-05-23 1975-05-23 Semi conductor device manufacturing method Pending JPS51137384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6108575A JPS51137384A (en) 1975-05-23 1975-05-23 Semi conductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6108575A JPS51137384A (en) 1975-05-23 1975-05-23 Semi conductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS51137384A true JPS51137384A (en) 1976-11-27

Family

ID=13160904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6108575A Pending JPS51137384A (en) 1975-05-23 1975-05-23 Semi conductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS51137384A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS5756927A (en) * 1981-07-28 1982-04-05 Hitachi Ltd Electrode structure for semiconductor device and manufacture thereof
JPS592320A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd 半導体装置の製造方法
JPS5975669A (ja) * 1982-10-25 1984-04-28 Seiko Epson Corp 薄膜半導体装置とその製造方法
JPS6187375A (ja) * 1985-10-18 1986-05-02 Nec Corp 半導体装置の製造方法
JPS61114524A (ja) * 1984-11-09 1986-06-02 Nec Corp 半導体装置の製造方法
JPH01103874A (ja) * 1988-05-20 1989-04-20 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPH03101264A (ja) * 1990-05-07 1991-04-26 Nec Corp 相補型電界効果トランジスタの製造方法
JPH07106563A (ja) * 1994-04-15 1995-04-21 Toshiba Corp 半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911583A (ja) * 1972-06-01 1974-02-01
JPS49105490A (ja) * 1973-02-07 1974-10-05

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911583A (ja) * 1972-06-01 1974-02-01
JPS49105490A (ja) * 1973-02-07 1974-10-05

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS5756927A (en) * 1981-07-28 1982-04-05 Hitachi Ltd Electrode structure for semiconductor device and manufacture thereof
JPS592320A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd 半導体装置の製造方法
JPS5975669A (ja) * 1982-10-25 1984-04-28 Seiko Epson Corp 薄膜半導体装置とその製造方法
JPS61114524A (ja) * 1984-11-09 1986-06-02 Nec Corp 半導体装置の製造方法
JPS6187375A (ja) * 1985-10-18 1986-05-02 Nec Corp 半導体装置の製造方法
JPH01103874A (ja) * 1988-05-20 1989-04-20 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置およびその製造方法
JPH03101264A (ja) * 1990-05-07 1991-04-26 Nec Corp 相補型電界効果トランジスタの製造方法
JPH07106563A (ja) * 1994-04-15 1995-04-21 Toshiba Corp 半導体装置の製造方法

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