JPS51147279A - Field effect transistor with insulated gate - Google Patents

Field effect transistor with insulated gate

Info

Publication number
JPS51147279A
JPS51147279A JP7176075A JP7176075A JPS51147279A JP S51147279 A JPS51147279 A JP S51147279A JP 7176075 A JP7176075 A JP 7176075A JP 7176075 A JP7176075 A JP 7176075A JP S51147279 A JPS51147279 A JP S51147279A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
insulated gate
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7176075A
Other languages
Japanese (ja)
Inventor
Mototaka Kamoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7176075A priority Critical patent/JPS51147279A/en
Publication of JPS51147279A publication Critical patent/JPS51147279A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce, in a self-matching type MOST, the concentration of impurities around a gate electrode of a source-drain PN junction so that short-circuit between a gate and source, and/or a gate and drain caused by dielectric breakdown of a gate film due to overvoltage can be prevented.
COPYRIGHT: (C)1976,JPO&Japio
JP7176075A 1975-06-13 1975-06-13 Field effect transistor with insulated gate Pending JPS51147279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7176075A JPS51147279A (en) 1975-06-13 1975-06-13 Field effect transistor with insulated gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7176075A JPS51147279A (en) 1975-06-13 1975-06-13 Field effect transistor with insulated gate

Publications (1)

Publication Number Publication Date
JPS51147279A true JPS51147279A (en) 1976-12-17

Family

ID=13469807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7176075A Pending JPS51147279A (en) 1975-06-13 1975-06-13 Field effect transistor with insulated gate

Country Status (1)

Country Link
JP (1) JPS51147279A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023989A (en) * 1973-07-02 1975-03-14
JPS5027483A (en) * 1973-07-10 1975-03-20

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023989A (en) * 1973-07-02 1975-03-14
JPS5027483A (en) * 1973-07-10 1975-03-20

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