JPS5286084A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5286084A
JPS5286084A JP206676A JP206676A JPS5286084A JP S5286084 A JPS5286084 A JP S5286084A JP 206676 A JP206676 A JP 206676A JP 206676 A JP206676 A JP 206676A JP S5286084 A JPS5286084 A JP S5286084A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
drain
gate
weaken
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP206676A
Other languages
Japanese (ja)
Inventor
Hiroo Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP206676A priority Critical patent/JPS5286084A/en
Publication of JPS5286084A publication Critical patent/JPS5286084A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To weaken the concentration of electric field between gate and drain and to improve the safety voltage of drain by using the same material to the semiconductive substrate as the material of gate electrode contacted to the gate insulating membrane and being it's impurity density to 4X1016∼1018 /cm3.
COPYRIGHT: (C)1977,JPO&Japio
JP206676A 1976-01-12 1976-01-12 Field effect transistor Pending JPS5286084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP206676A JPS5286084A (en) 1976-01-12 1976-01-12 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP206676A JPS5286084A (en) 1976-01-12 1976-01-12 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5286084A true JPS5286084A (en) 1977-07-16

Family

ID=11518959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP206676A Pending JPS5286084A (en) 1976-01-12 1976-01-12 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5286084A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612773A (en) * 1979-07-12 1981-02-07 Seiko Epson Corp Silicon gate mos field-effect transistor
JPS6057972A (en) * 1983-09-09 1985-04-03 Toshiba Corp Insulated gate field effect transistor
JPS62179768A (en) * 1986-02-04 1987-08-06 Nec Corp Field effect transistor
JPS62224962A (en) * 1986-03-26 1987-10-02 Mitsubishi Electric Corp Semiconductor device
JPH03293767A (en) * 1990-10-19 1991-12-25 Semiconductor Res Found Semiconductor device
JPH0496275A (en) * 1990-08-03 1992-03-27 Nkk Corp MOS type semiconductor device
JPH09148564A (en) * 1995-11-24 1997-06-06 Nec Corp Semiconductor device and its manufacture

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5612773A (en) * 1979-07-12 1981-02-07 Seiko Epson Corp Silicon gate mos field-effect transistor
JPS6057972A (en) * 1983-09-09 1985-04-03 Toshiba Corp Insulated gate field effect transistor
JPS62179768A (en) * 1986-02-04 1987-08-06 Nec Corp Field effect transistor
JPS62224962A (en) * 1986-03-26 1987-10-02 Mitsubishi Electric Corp Semiconductor device
JPH0496275A (en) * 1990-08-03 1992-03-27 Nkk Corp MOS type semiconductor device
JPH03293767A (en) * 1990-10-19 1991-12-25 Semiconductor Res Found Semiconductor device
JPH09148564A (en) * 1995-11-24 1997-06-06 Nec Corp Semiconductor device and its manufacture

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