JPS51147985A - Method of manufacturing a semiconductor light emission device - Google Patents

Method of manufacturing a semiconductor light emission device

Info

Publication number
JPS51147985A
JPS51147985A JP7224275A JP7224275A JPS51147985A JP S51147985 A JPS51147985 A JP S51147985A JP 7224275 A JP7224275 A JP 7224275A JP 7224275 A JP7224275 A JP 7224275A JP S51147985 A JPS51147985 A JP S51147985A
Authority
JP
Japan
Prior art keywords
manufacturing
light emission
semiconductor light
emission device
strap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7224275A
Other languages
Japanese (ja)
Other versions
JPS5711155B2 (en
Inventor
Tsugio Kumai
Shigeo Osaka
Hiroshi Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7224275A priority Critical patent/JPS51147985A/en
Publication of JPS51147985A publication Critical patent/JPS51147985A/en
Publication of JPS5711155B2 publication Critical patent/JPS5711155B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To narrow the strap portion with an excellent reproducibility by providing a conductive type layer cut partially away with a strap-shape portion at the middle area thereof onto a semiconductor formed with a double hetero junction, forming a contact layer and then applying a heat treatment.
JP7224275A 1975-06-13 1975-06-13 Method of manufacturing a semiconductor light emission device Granted JPS51147985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7224275A JPS51147985A (en) 1975-06-13 1975-06-13 Method of manufacturing a semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7224275A JPS51147985A (en) 1975-06-13 1975-06-13 Method of manufacturing a semiconductor light emission device

Publications (2)

Publication Number Publication Date
JPS51147985A true JPS51147985A (en) 1976-12-18
JPS5711155B2 JPS5711155B2 (en) 1982-03-02

Family

ID=13483612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7224275A Granted JPS51147985A (en) 1975-06-13 1975-06-13 Method of manufacturing a semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS51147985A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128288A (en) * 1977-04-13 1978-11-09 Sharp Corp Semiconductor laser element and production of the same
JPS53140984A (en) * 1977-05-13 1978-12-08 Sharp Corp Semiconductor laser element and production of the same
JPS5471588A (en) * 1977-11-17 1979-06-08 Sharp Corp Stripe structure and production of semiconductor laser elements
JPS55105393A (en) * 1979-02-08 1980-08-12 Nippon Telegr & Teleph Corp <Ntt> Process of semiconductor laser device
JPS55123190A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
JPS55123191A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
JPS55157281A (en) * 1979-05-25 1980-12-06 Fujitsu Ltd Semiconductor light emitting device
JPS5638885A (en) * 1979-09-07 1981-04-14 Fujitsu Ltd Light emission semiconductor device
JPS57112090A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor laser
JPS57152182A (en) * 1981-03-16 1982-09-20 Nec Corp Manufacture of semiconductor laser device
JPS5842283A (en) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried type semiconductor laser
JPS603180A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
JPS6045086A (en) * 1983-08-22 1985-03-11 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS60110188A (en) * 1983-11-18 1985-06-15 Sharp Corp Semiconductor laser element
JPS60187057A (en) * 1984-03-06 1985-09-24 Fujitsu Ltd Semiconductor device
JPS60229389A (en) * 1984-04-26 1985-11-14 Sharp Corp Semiconductor laser element
US4810670A (en) * 1986-03-06 1989-03-07 Kabushiki Kaisha Toshiba Method of manufacturing an embedded type semiconductor laser
JPH05206517A (en) * 1991-05-31 1993-08-13 Shin Etsu Handotai Co Ltd Light-emitting element

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128288A (en) * 1977-04-13 1978-11-09 Sharp Corp Semiconductor laser element and production of the same
JPS53140984A (en) * 1977-05-13 1978-12-08 Sharp Corp Semiconductor laser element and production of the same
JPS5471588A (en) * 1977-11-17 1979-06-08 Sharp Corp Stripe structure and production of semiconductor laser elements
JPS55105393A (en) * 1979-02-08 1980-08-12 Nippon Telegr & Teleph Corp <Ntt> Process of semiconductor laser device
JPS55123190A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
JPS55123191A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
JPS55157281A (en) * 1979-05-25 1980-12-06 Fujitsu Ltd Semiconductor light emitting device
JPS5638885A (en) * 1979-09-07 1981-04-14 Fujitsu Ltd Light emission semiconductor device
JPS57112090A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor laser
JPS57152182A (en) * 1981-03-16 1982-09-20 Nec Corp Manufacture of semiconductor laser device
JPS5842283A (en) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried type semiconductor laser
JPS603180A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device
JPS6045086A (en) * 1983-08-22 1985-03-11 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS60110188A (en) * 1983-11-18 1985-06-15 Sharp Corp Semiconductor laser element
JPS60187057A (en) * 1984-03-06 1985-09-24 Fujitsu Ltd Semiconductor device
JPS60229389A (en) * 1984-04-26 1985-11-14 Sharp Corp Semiconductor laser element
US4810670A (en) * 1986-03-06 1989-03-07 Kabushiki Kaisha Toshiba Method of manufacturing an embedded type semiconductor laser
JPH05206517A (en) * 1991-05-31 1993-08-13 Shin Etsu Handotai Co Ltd Light-emitting element

Also Published As

Publication number Publication date
JPS5711155B2 (en) 1982-03-02

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