JPS52116072A - Process for doping nitrogen to gallium phosphide - Google Patents

Process for doping nitrogen to gallium phosphide

Info

Publication number
JPS52116072A
JPS52116072A JP3340576A JP3340576A JPS52116072A JP S52116072 A JPS52116072 A JP S52116072A JP 3340576 A JP3340576 A JP 3340576A JP 3340576 A JP3340576 A JP 3340576A JP S52116072 A JPS52116072 A JP S52116072A
Authority
JP
Japan
Prior art keywords
gallium phosphide
doping nitrogen
doping
nitrogen
phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3340576A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5524692B2 (cs
Inventor
Shinichi Akai
Hideki Mori
Takashi Shimoda
Shinichi Iguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP3340576A priority Critical patent/JPS52116072A/ja
Publication of JPS52116072A publication Critical patent/JPS52116072A/ja
Publication of JPS5524692B2 publication Critical patent/JPS5524692B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP3340576A 1976-03-25 1976-03-25 Process for doping nitrogen to gallium phosphide Granted JPS52116072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3340576A JPS52116072A (en) 1976-03-25 1976-03-25 Process for doping nitrogen to gallium phosphide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3340576A JPS52116072A (en) 1976-03-25 1976-03-25 Process for doping nitrogen to gallium phosphide

Publications (2)

Publication Number Publication Date
JPS52116072A true JPS52116072A (en) 1977-09-29
JPS5524692B2 JPS5524692B2 (cs) 1980-07-01

Family

ID=12385678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3340576A Granted JPS52116072A (en) 1976-03-25 1976-03-25 Process for doping nitrogen to gallium phosphide

Country Status (1)

Country Link
JP (1) JPS52116072A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453975A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element
JPS5453977A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element
JPS54133889A (en) * 1978-04-08 1979-10-17 Toshiba Corp Manufacture of gallium-phosphide green luminous element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127588A (cs) * 1973-04-06 1974-12-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127588A (cs) * 1973-04-06 1974-12-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453975A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element
JPS5453977A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element
JPS54133889A (en) * 1978-04-08 1979-10-17 Toshiba Corp Manufacture of gallium-phosphide green luminous element

Also Published As

Publication number Publication date
JPS5524692B2 (cs) 1980-07-01

Similar Documents

Publication Publication Date Title
JPS52152164A (en) Epitaxial wafer of group iii-v compound
JPS52116072A (en) Process for doping nitrogen to gallium phosphide
JPS5286059A (en) Process for production and apparatus used for process of semiconductor device
JPS5296865A (en) Crystal grown unit for chemical compound semiconductor
JPS524782A (en) Liquid phase epitaxial growth method
JPS5274280A (en) Semiconductor device and its production
JPS5244166A (en) Method of growing semiconductor
JPS526093A (en) Production method of semiconductor device
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5271172A (en) Growth of p type boron phosphide semiconductor
JPS52120763A (en) Silicon epitaxial growth method
JPS51126043A (en) Gaseous phase growth method of iii-v group compounded semi-conductors
JPS5211860A (en) Liquid phase epitaxial device
JPS51126049A (en) Compounded semi-conductor gaseous phase epitaxial growth method
JPS52109867A (en) Manufacture for semiconductor crystal
JPS534466A (en) Doping method of group ii # elements into boron phosphide semiconductor
JPS5370666A (en) Production of semiconductor device
JPS5382280A (en) Gallium phosphide emtting device
JPS5267259A (en) Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5345171A (en) Molecular beam epitaxial growth method
JPS52152163A (en) Gallium arsenic epitaxial vapor growth
JPS52115171A (en) Liquid phase epitaxial growing method
JPS5336464A (en) Life-time reduction for minority carrier
JPS52114269A (en) Selective liquid growing method
JPS5353253A (en) Manufacture of semiconductor epitaxial growth layer