JPS5223600A - Method for making growth single crystal of gallium nitride - Google Patents

Method for making growth single crystal of gallium nitride

Info

Publication number
JPS5223600A
JPS5223600A JP10083275A JP10083275A JPS5223600A JP S5223600 A JPS5223600 A JP S5223600A JP 10083275 A JP10083275 A JP 10083275A JP 10083275 A JP10083275 A JP 10083275A JP S5223600 A JPS5223600 A JP S5223600A
Authority
JP
Japan
Prior art keywords
single crystal
gallium nitride
growth single
making growth
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10083275A
Other languages
English (en)
Other versions
JPS5815480B2 (ja
Inventor
Masaru Kazumura
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50100832A priority Critical patent/JPS5815480B2/ja
Publication of JPS5223600A publication Critical patent/JPS5223600A/ja
Publication of JPS5815480B2 publication Critical patent/JPS5815480B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP50100832A 1975-08-19 1975-08-19 チツカガリウムタンケツシヨウノ セイチヨウホウホウ Expired JPS5815480B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50100832A JPS5815480B2 (ja) 1975-08-19 1975-08-19 チツカガリウムタンケツシヨウノ セイチヨウホウホウ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50100832A JPS5815480B2 (ja) 1975-08-19 1975-08-19 チツカガリウムタンケツシヨウノ セイチヨウホウホウ

Publications (2)

Publication Number Publication Date
JPS5223600A true JPS5223600A (en) 1977-02-22
JPS5815480B2 JPS5815480B2 (ja) 1983-03-25

Family

ID=14284280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50100832A Expired JPS5815480B2 (ja) 1975-08-19 1975-08-19 チツカガリウムタンケツシヨウノ セイチヨウホウホウ

Country Status (1)

Country Link
JP (1) JPS5815480B2 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
JPH04297023A (ja) † 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JPH06196757A (ja) * 1992-06-10 1994-07-15 Nichia Chem Ind Ltd 窒化インジウムガリウム半導体の成長方法
JP2003510233A (ja) * 2000-01-26 2003-03-18 カーベーアー−ジオリ ソシエテ アノニム 紙シート検出用装置と方法
JP2004508268A (ja) * 2000-09-06 2004-03-18 シービーエル　テクノロジーズ　インコーポレーテッド 欠陥の少ない、亀裂のないエピタキシャル膜を不整合基板上に形成する方法
US6939730B2 (en) 2001-04-24 2005-09-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
JP2009021619A (ja) * 1991-03-18 2009-01-29 Trustees Of Boston Univ サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス
JP2009234800A (ja) * 2008-03-25 2009-10-15 Osaka Univ Ｉｉｉ族元素窒化物結晶の製造方法およびそれにより得られるｉｉｉ族元素窒化物結晶
WO2015053341A1 (ja) 2013-10-09 2015-04-16 国立大学法人大阪大学 Ｉｉｉ族元素窒化物結晶の製造方法、ｉｉｉ族元素窒化物結晶、半導体装置、およびｉｉｉ族元素窒化物結晶製造装置
KR20160130396A (ko) 2014-03-03 2016-11-11 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 Iii족 질화물 결정의 제조 방법 및 iii족 질화물 결정 제조 장치
US10011921B2 (en) 2014-10-29 2018-07-03 Osaka University Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device
US10266965B2 (en) 2014-03-03 2019-04-23 Osaka University Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal
US11186922B2 (en) 2019-06-06 2021-11-30 Panasonic Corporation Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631320A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631320A (en) * 1979-08-22 1981-03-30 Mitsubishi Electric Corp Grounddfault current detector

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
JPH04297023A (ja) † 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JP2009021619A (ja) * 1991-03-18 2009-01-29 Trustees Of Boston Univ サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス
JP2010093271A (ja) * 1991-03-18 2010-04-22 Trustees Of Boston Univ サファイア基板を活性窒素に暴露して半導体デバイスを作製する方法及び半導体デバイス
JPH06196757A (ja) * 1992-06-10 1994-07-15 Nichia Chem Ind Ltd 窒化インジウムガリウム半導体の成長方法
JP2003510233A (ja) * 2000-01-26 2003-03-18 カーベーアー−ジオリ ソシエテ アノニム 紙シート検出用装置と方法
JP2004508268A (ja) * 2000-09-06 2004-03-18 シービーエル　テクノロジーズ　インコーポレーテッド 欠陥の少ない、亀裂のないエピタキシャル膜を不整合基板上に形成する方法
US6939730B2 (en) 2001-04-24 2005-09-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
US7282379B2 (en) 2001-04-24 2007-10-16 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
US6972206B2 (en) 2001-04-24 2005-12-06 Sony Corporation Nitride semiconductor, semiconductor device, and method of manufacturing the same
JP2009234800A (ja) * 2008-03-25 2009-10-15 Osaka Univ Ｉｉｉ族元素窒化物結晶の製造方法およびそれにより得られるｉｉｉ族元素窒化物結晶
WO2015053341A1 (ja) 2013-10-09 2015-04-16 国立大学法人大阪大学 Ｉｉｉ族元素窒化物結晶の製造方法、ｉｉｉ族元素窒化物結晶、半導体装置、およびｉｉｉ族元素窒化物結晶製造装置
US10026612B2 (en) 2013-10-09 2018-07-17 Osaka University Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal
KR20160130396A (ko) 2014-03-03 2016-11-11 고꾸리쯔 다이가꾸 호우징 오사까 다이가꾸 Iii족 질화물 결정의 제조 방법 및 iii족 질화물 결정 제조 장치
CN106460228A (zh) * 2014-03-03 2017-02-22 国立大学法人大阪大学 Iii族氮化物结晶的制造方法及iii族氮化物结晶制造装置
US10202710B2 (en) 2014-03-03 2019-02-12 Osaka University Process for producing group III nitride crystal and apparatus for producing group III nitride crystal
US10266965B2 (en) 2014-03-03 2019-04-23 Osaka University Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal
CN106460228B (zh) * 2014-03-03 2019-04-26 国立大学法人大阪大学 Iii族氮化物结晶的制造方法及iii族氮化物结晶制造装置
US10011921B2 (en) 2014-10-29 2018-07-03 Osaka University Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device
US11186922B2 (en) 2019-06-06 2021-11-30 Panasonic Corporation Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions

Also Published As

Publication number Publication date
JPS5815480B2 (ja) 1983-03-25

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