JPS526092A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS526092A
JPS526092A JP8238775A JP8238775A JPS526092A JP S526092 A JPS526092 A JP S526092A JP 8238775 A JP8238775 A JP 8238775A JP 8238775 A JP8238775 A JP 8238775A JP S526092 A JPS526092 A JP S526092A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
redistribution
ready
enclosed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8238775A
Other languages
Japanese (ja)
Inventor
Saburo Osaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8238775A priority Critical patent/JPS526092A/en
Publication of JPS526092A publication Critical patent/JPS526092A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: In order to form a bipolar semiconductor IC being enclosed with an inductor film on the side of element region, without the heat oxidation process which needs hot temperature and long time which might cause the redistribution of ready-established impurity layer.
COPYRIGHT: (C)1977,JPO&Japio
JP8238775A 1975-07-03 1975-07-03 Production method of semiconductor device Pending JPS526092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238775A JPS526092A (en) 1975-07-03 1975-07-03 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238775A JPS526092A (en) 1975-07-03 1975-07-03 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS526092A true JPS526092A (en) 1977-01-18

Family

ID=13773159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238775A Pending JPS526092A (en) 1975-07-03 1975-07-03 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS526092A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216276A (en) * 1989-12-08 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having high matching degree and high integration density

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216276A (en) * 1989-12-08 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having high matching degree and high integration density

Similar Documents

Publication Publication Date Title
JPS51123561A (en) Production method of semicondvctor device
JPS5277590A (en) Semiconductor producing device
JPS5238885A (en) Method for production of semiconductor device
JPS526091A (en) Production method of semiconductor device
JPS51142975A (en) Production method of semiconductor devices
JPS5236468A (en) Shallow diffusion method
JPS5421265A (en) Forming method of semiconductor oxide film
JPS5420671A (en) Production of semiconductor devices
JPS51147286A (en) Manufacturing process of semiconductor
JPS5236980A (en) Heat sink for semiconductor devices
JPS5230163A (en) Method for junction of semiconductor parts
JPS5273673A (en) Production of semiconductor device
JPS51132763A (en) Production method of semiconductor device
JPS533066A (en) Electrode formation method
JPS5219968A (en) Semiconductor ic manufacturig process
JPS5248479A (en) Semiconductor device and process for production of the same
JPS5375758A (en) Heat processing method of semiconductor device
JPS528787A (en) Semiconductor device process
JPS51147283A (en) Manufacturing process of semiconductor device
JPS5217232A (en) High-frequency heating method
JPS5262589A (en) Seal-packaging method using ultra-thin film
JPS5295164A (en) Dividing and cleansing for semi-conductor pellet
JPS5329082A (en) Semiconductor device
JPS5213775A (en) Production method of semiconductor device
JPS51114739A (en) Heating table