JPS526092A - Production method of semiconductor device - Google Patents
Production method of semiconductor deviceInfo
- Publication number
- JPS526092A JPS526092A JP8238775A JP8238775A JPS526092A JP S526092 A JPS526092 A JP S526092A JP 8238775 A JP8238775 A JP 8238775A JP 8238775 A JP8238775 A JP 8238775A JP S526092 A JPS526092 A JP S526092A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production method
- redistribution
- ready
- enclosed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8238775A JPS526092A (en) | 1975-07-03 | 1975-07-03 | Production method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8238775A JPS526092A (en) | 1975-07-03 | 1975-07-03 | Production method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS526092A true JPS526092A (en) | 1977-01-18 |
Family
ID=13773159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8238775A Pending JPS526092A (en) | 1975-07-03 | 1975-07-03 | Production method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS526092A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5216276A (en) * | 1989-12-08 | 1993-06-01 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having high matching degree and high integration density |
-
1975
- 1975-07-03 JP JP8238775A patent/JPS526092A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5216276A (en) * | 1989-12-08 | 1993-06-01 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having high matching degree and high integration density |
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