JPS5263066A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5263066A
JPS5263066A JP13811975A JP13811975A JPS5263066A JP S5263066 A JPS5263066 A JP S5263066A JP 13811975 A JP13811975 A JP 13811975A JP 13811975 A JP13811975 A JP 13811975A JP S5263066 A JPS5263066 A JP S5263066A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
lifttime
thyristor
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13811975A
Other languages
Japanese (ja)
Other versions
JPS5427232B2 (en
Inventor
Yasuhiro Mochizuki
Hideyuki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13811975A priority Critical patent/JPS5263066A/en
Publication of JPS5263066A publication Critical patent/JPS5263066A/en
Publication of JPS5427232B2 publication Critical patent/JPS5427232B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To reduce the lifttime of minority carrier and improve the characteristics of a thyristor by performing high temperature diffusion after vapor-depositing gold at a low tenperature in a n type Si region containing more than a given concentration of phosphorus, etc.
COPYRIGHT: (C)1977,JPO&Japio
JP13811975A 1975-11-19 1975-11-19 Production of semiconductor device Granted JPS5263066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13811975A JPS5263066A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13811975A JPS5263066A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5263066A true JPS5263066A (en) 1977-05-25
JPS5427232B2 JPS5427232B2 (en) 1979-09-08

Family

ID=15214399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13811975A Granted JPS5263066A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5263066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718371A (en) * 1980-07-08 1982-01-30 Toshiba Corp High frequency low loss pin diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826664A (en) * 1971-08-09 1973-04-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826664A (en) * 1971-08-09 1973-04-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718371A (en) * 1980-07-08 1982-01-30 Toshiba Corp High frequency low loss pin diode

Also Published As

Publication number Publication date
JPS5427232B2 (en) 1979-09-08

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