JPS5325355A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5325355A JPS5325355A JP9971176A JP9971176A JPS5325355A JP S5325355 A JPS5325355 A JP S5325355A JP 9971176 A JP9971176 A JP 9971176A JP 9971176 A JP9971176 A JP 9971176A JP S5325355 A JPS5325355 A JP S5325355A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- metal layer
- temperature
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To achieve the prevention in the degradation of hfe linearity and noise characteristics by making the temperature of alloy at the temperature which is above the eutectic forming temperature of a semiconductor substrate and a metal layer and at which the metal layer of the first layer of trimetal electrodes diffuses into the metal layer of the second layer and does not float the surface thereof.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9971176A JPS5325355A (en) | 1976-08-23 | 1976-08-23 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9971176A JPS5325355A (en) | 1976-08-23 | 1976-08-23 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5325355A true JPS5325355A (en) | 1978-03-09 |
Family
ID=14254648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9971176A Pending JPS5325355A (en) | 1976-08-23 | 1976-08-23 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5325355A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4576659A (en) * | 1982-12-02 | 1986-03-18 | International Business Machines Corporation | Process for inhibiting metal migration during heat cycling of multilayer thin metal film structures |
| JPS61161741A (en) * | 1985-01-11 | 1986-07-22 | Nec Corp | Semiconductor device |
-
1976
- 1976-08-23 JP JP9971176A patent/JPS5325355A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4576659A (en) * | 1982-12-02 | 1986-03-18 | International Business Machines Corporation | Process for inhibiting metal migration during heat cycling of multilayer thin metal film structures |
| JPS61161741A (en) * | 1985-01-11 | 1986-07-22 | Nec Corp | Semiconductor device |
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