JPS5325355A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5325355A
JPS5325355A JP9971176A JP9971176A JPS5325355A JP S5325355 A JPS5325355 A JP S5325355A JP 9971176 A JP9971176 A JP 9971176A JP 9971176 A JP9971176 A JP 9971176A JP S5325355 A JPS5325355 A JP S5325355A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
metal layer
temperature
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9971176A
Other languages
Japanese (ja)
Inventor
Yuji Hara
Kazutoshi Ashikawa
Kazuo Nojiri
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9971176A priority Critical patent/JPS5325355A/en
Publication of JPS5325355A publication Critical patent/JPS5325355A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To achieve the prevention in the degradation of hfe linearity and noise characteristics by making the temperature of alloy at the temperature which is above the eutectic forming temperature of a semiconductor substrate and a metal layer and at which the metal layer of the first layer of trimetal electrodes diffuses into the metal layer of the second layer and does not float the surface thereof.
COPYRIGHT: (C)1978,JPO&Japio
JP9971176A 1976-08-23 1976-08-23 Production of semiconductor device Pending JPS5325355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9971176A JPS5325355A (en) 1976-08-23 1976-08-23 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9971176A JPS5325355A (en) 1976-08-23 1976-08-23 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5325355A true JPS5325355A (en) 1978-03-09

Family

ID=14254648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9971176A Pending JPS5325355A (en) 1976-08-23 1976-08-23 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5325355A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4576659A (en) * 1982-12-02 1986-03-18 International Business Machines Corporation Process for inhibiting metal migration during heat cycling of multilayer thin metal film structures
JPS61161741A (en) * 1985-01-11 1986-07-22 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4576659A (en) * 1982-12-02 1986-03-18 International Business Machines Corporation Process for inhibiting metal migration during heat cycling of multilayer thin metal film structures
JPS61161741A (en) * 1985-01-11 1986-07-22 Nec Corp Semiconductor device

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