JPS5331982A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5331982A JPS5331982A JP10647876A JP10647876A JPS5331982A JP S5331982 A JPS5331982 A JP S5331982A JP 10647876 A JP10647876 A JP 10647876A JP 10647876 A JP10647876 A JP 10647876A JP S5331982 A JPS5331982 A JP S5331982A
- Authority
- JP
- Japan
- Prior art keywords
- depletion layer
- insulation substrate
- semiconductor device
- reduce
- extincting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To narrow the depletion layer at PN junction, reduce the number of the producing and extincting centers of carriers in the depletion layer and reduce leakage current by making the doping level of the doner or acceptor atoms to the thin single crystal Si film provided on an insulation substrate heigher at the portion near the interface with the insulation substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10647876A JPS5331982A (en) | 1976-09-06 | 1976-09-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10647876A JPS5331982A (en) | 1976-09-06 | 1976-09-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5331982A true JPS5331982A (en) | 1978-03-25 |
Family
ID=14434594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10647876A Pending JPS5331982A (en) | 1976-09-06 | 1976-09-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5331982A (en) |
-
1976
- 1976-09-06 JP JP10647876A patent/JPS5331982A/en active Pending
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