JPS5378180A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5378180A
JPS5378180A JP15337276A JP15337276A JPS5378180A JP S5378180 A JPS5378180 A JP S5378180A JP 15337276 A JP15337276 A JP 15337276A JP 15337276 A JP15337276 A JP 15337276A JP S5378180 A JPS5378180 A JP S5378180A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
impurity
diffusion coefficient
junction boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15337276A
Other languages
Japanese (ja)
Inventor
Yoshiaki Kamigaki
Hiroo Masuda
Yuji Tanida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15337276A priority Critical patent/JPS5378180A/en
Publication of JPS5378180A publication Critical patent/JPS5378180A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: For the easing of the electric field at a junction boundary, the insulating film containing the impurity of a large diffusion coefficient in addition to the impurity of a small diffusion coefficient is used for covering and diffusing the junction boundary via the oxidized film between thin films, thereby improving the dielectric strength.
COPYRIGHT: (C)1978,JPO&Japio
JP15337276A 1976-12-22 1976-12-22 Manufacture of semiconductor device Pending JPS5378180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15337276A JPS5378180A (en) 1976-12-22 1976-12-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15337276A JPS5378180A (en) 1976-12-22 1976-12-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5378180A true JPS5378180A (en) 1978-07-11

Family

ID=15561006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15337276A Pending JPS5378180A (en) 1976-12-22 1976-12-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378180A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118153A (en) * 1982-01-07 1983-07-14 Seiko Epson Corp Manufacturing method of semiconductor device
JPS5961071A (en) * 1982-08-30 1984-04-07 テキサス・インスツルメンツ・インコ−ポレイテツド Insulated gate field effect transistor and method of produc-ing same
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118153A (en) * 1982-01-07 1983-07-14 Seiko Epson Corp Manufacturing method of semiconductor device
JPS5961071A (en) * 1982-08-30 1984-04-07 テキサス・インスツルメンツ・インコ−ポレイテツド Insulated gate field effect transistor and method of produc-ing same
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method

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