JPS5384692A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5384692A JPS5384692A JP16064576A JP16064576A JPS5384692A JP S5384692 A JPS5384692 A JP S5384692A JP 16064576 A JP16064576 A JP 16064576A JP 16064576 A JP16064576 A JP 16064576A JP S5384692 A JPS5384692 A JP S5384692A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resistors
- transistors
- aligned
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE:To prevent the production of a difference in the resistance values of self-aligned resistors, etc. or the characteristics of transistors by forming additive V-type regions without having element isolating function in a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064576A JPS5384692A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064576A JPS5384692A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5384692A true JPS5384692A (en) | 1978-07-26 |
| JPS5549774B2 JPS5549774B2 (en) | 1980-12-13 |
Family
ID=15719402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16064576A Granted JPS5384692A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5384692A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136328A (en) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05139522A (en) * | 1991-11-14 | 1993-06-08 | Mitsunori Saka | Rotary grizzly bar |
-
1976
- 1976-12-29 JP JP16064576A patent/JPS5384692A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136328A (en) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5549774B2 (en) | 1980-12-13 |
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