JPS5378783A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5378783A
JPS5378783A JP15529176A JP15529176A JPS5378783A JP S5378783 A JPS5378783 A JP S5378783A JP 15529176 A JP15529176 A JP 15529176A JP 15529176 A JP15529176 A JP 15529176A JP S5378783 A JPS5378783 A JP S5378783A
Authority
JP
Japan
Prior art keywords
semiconductor device
well
type
mos
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15529176A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Motoo Nakano
Yasuo Kobayashi
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15529176A priority Critical patent/JPS5378783A/en
Publication of JPS5378783A publication Critical patent/JPS5378783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to cause C-MOS without a well, the normal MOS . FET with a well and the other element, formed on the p-type or n-type Si substrate of 1000OMEGAcm in specific resistance, to operate under the same condition as the conventional circuit.
JP15529176A 1976-12-23 1976-12-23 Semiconductor device Pending JPS5378783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15529176A JPS5378783A (en) 1976-12-23 1976-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15529176A JPS5378783A (en) 1976-12-23 1976-12-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5378783A true JPS5378783A (en) 1978-07-12

Family

ID=15602675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15529176A Pending JPS5378783A (en) 1976-12-23 1976-12-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378783A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586162A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp semiconductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586162A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp semiconductor equipment

Similar Documents

Publication Publication Date Title
JPS5230388A (en) Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS51135373A (en) Semiconductor device
JPS5326175A (en) Electronic watch
JPS52101967A (en) Semiconductor device
JPS5376679A (en) Semiconductor device
JPS5378783A (en) Semiconductor device
JPS52124889A (en) Semiconductor photoelectric transducer
JPS5289464A (en) Semiconductor device
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5272586A (en) Production of semiconductor device
JPS545392A (en) Semiconductor integrated circuit and its manufacture
JPS5565453A (en) Semiconductor device
JPS5372472A (en) Semiconductor device
JPS52139388A (en) Mos type semiconductor device
JPS52117582A (en) Mos type semiconductor device
JPS52112754A (en) Mos transistor constant-voltage circuit
JPS5416184A (en) Semiconductor diode element
JPS53108394A (en) Semiconductor intergrated circuit device
JPS53141587A (en) Complementary field effect semiconductor device
JPS539484A (en) Integrated circuit device
JPS52133762A (en) Complementary type field effect semiconductor in tegrated circuit device
JPS53101281A (en) Semiconductor device
JPS53137677A (en) Junction type field effect transistor and its manufacture
JPS5360555A (en) Mos-type integrated circuit device
JPS5384692A (en) Semiconductor device