JPS5491085A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5491085A JPS5491085A JP15799777A JP15799777A JPS5491085A JP S5491085 A JPS5491085 A JP S5491085A JP 15799777 A JP15799777 A JP 15799777A JP 15799777 A JP15799777 A JP 15799777A JP S5491085 A JPS5491085 A JP S5491085A
- Authority
- JP
- Japan
- Prior art keywords
- potential
- terminal
- region
- regions
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000003990 capacitor Substances 0.000 abstract 3
- 239000000126 substance Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To generate a potential of the opposite polarity to a power voltage in an IC with good reproducibility by providing two reverse conduction type regions to the surface of a one conduction type semiconductor substrate and by forming a series circuit of a capacitor and diode between those regions.
CONSTITUTION: On the surface of P-type semiconductor substrate 101, thick insulating substance 102 and N-type regions 103 and 104 are formed. Next, insulating substance 105 is provided with region 103 held at one voltage of the capacitor and other electrode 106 of the capacitor is formed of metal or a high-density semiconductor. Electrode 106 is connected to P-type region 107 provided to region 104. In this constitution, terminal 110 is grounded and terminal 108 is applied to a positive square pulse, so that when the potential reaches positive value V0, the potential at terminal 109 will becomes minus by contact potential Vin of the p-n junction of the diode formed between regions 107 and 104. Next, when the potential at terminal 108 decreases down to the earth potential, the potential at terminal 109 becomes minus by |Vin|+V0. In this way, a negative square pulse is generated at terminal 109. In addition, either conduction type of each region can be used.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15799777A JPS5491085A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15799777A JPS5491085A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5491085A true JPS5491085A (en) | 1979-07-19 |
| JPS6237535B2 JPS6237535B2 (en) | 1987-08-13 |
Family
ID=15661978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15799777A Granted JPS5491085A (en) | 1977-12-28 | 1977-12-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491085A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0182530U (en) * | 1987-11-20 | 1989-06-01 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5222401A (en) * | 1975-08-13 | 1977-02-19 | Matsushita Electric Ind Co Ltd | Tuner |
-
1977
- 1977-12-28 JP JP15799777A patent/JPS5491085A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5222401A (en) * | 1975-08-13 | 1977-02-19 | Matsushita Electric Ind Co Ltd | Tuner |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237535B2 (en) | 1987-08-13 |
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