JPS551137A - Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate - Google Patents

Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate

Info

Publication number
JPS551137A
JPS551137A JP7434178A JP7434178A JPS551137A JP S551137 A JPS551137 A JP S551137A JP 7434178 A JP7434178 A JP 7434178A JP 7434178 A JP7434178 A JP 7434178A JP S551137 A JPS551137 A JP S551137A
Authority
JP
Japan
Prior art keywords
ascl
gaseous phase
introducing
phase epitaxial
breeding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7434178A
Other languages
Japanese (ja)
Inventor
Katsunobu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP7434178A priority Critical patent/JPS551137A/en
Publication of JPS551137A publication Critical patent/JPS551137A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make good reproduction of the gaseous phase epitaxial substrates os GaAs with higher carrier concentration than 1015/cm2 of which substrates the main surface is inclined in 0W5° with (100) surface toward main axis.
CONSTITUTION: A substrate having a surface inclined in 2° with (100) surface is placed on a holder 13, and rotated at 10 rpm. Further, said substrate is etched by introducing 16 refined H2 at 4 lit./min., raising the temperature of ovens 11 and 14 to 860°C and 750°C respectively, and introducing saturated H2 at 10cm3/min. HCl is generated through the process consisting of encasing AsCl3 supplying H2 at 500cm3/ min. to the bubbler 3 kept at 15°C, and introducing AsCl3 into a reaction pipe 5 whose temperature is set to 880°C previously. The H2 containing HCl is led to the surface of Ga in a boat 10 after removing As therefrom with a filter 8. The H2 supplied at 300cm3/min. is saturated with the AsCl3 supplied at 4.2 × 10-6 mol/ min., and introduced 15 into a reactor 9. At this time, Ga/As is set to 0.5W10. In this condition, the good reproduction of a desired epitaxial layer can be made.
COPYRIGHT: (C)1980,JPO&Japio
JP7434178A 1978-06-20 1978-06-20 Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate Pending JPS551137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7434178A JPS551137A (en) 1978-06-20 1978-06-20 Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7434178A JPS551137A (en) 1978-06-20 1978-06-20 Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate

Publications (1)

Publication Number Publication Date
JPS551137A true JPS551137A (en) 1980-01-07

Family

ID=13544313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7434178A Pending JPS551137A (en) 1978-06-20 1978-06-20 Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate

Country Status (1)

Country Link
JP (1) JPS551137A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61261300A (en) * 1985-05-15 1986-11-19 Mitsubishi Monsanto Chem Co Single crystal substrate of gallium arsenide
JPS6291494A (en) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan Method and device for growing compound semiconductor single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61261300A (en) * 1985-05-15 1986-11-19 Mitsubishi Monsanto Chem Co Single crystal substrate of gallium arsenide
JPS6291494A (en) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan Method and device for growing compound semiconductor single crystal

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