JPS5524488A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5524488A JPS5524488A JP9790378A JP9790378A JPS5524488A JP S5524488 A JPS5524488 A JP S5524488A JP 9790378 A JP9790378 A JP 9790378A JP 9790378 A JP9790378 A JP 9790378A JP S5524488 A JPS5524488 A JP S5524488A
- Authority
- JP
- Japan
- Prior art keywords
- range
- grooves
- type
- substrate
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000926 separation method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: For increasing integration degree and operation speed and decreasing power consumption, to provide grooves in the surface of a semiconductor and to use said grooves for separation or to provide range for separation or draw-out for example by diffusing impurities on the wall faces of said grooves.
CONSTITUTION: N-type buried range 11 is diffusedly formed in a P-type Si substrate 1, N--layer 2 is epitaxially formed over the whole surface of said substrate 1, and said substrate 1 is covered with SiO2 film 71. Nixt, openings are provided in said film, one so as to correspond to an end portion of said range 11 and the other two so that said range 11 may be sandwiched therebetween, and V-shaped grooves 91W 93 extending up to said substrate 1 are provided by the etching in which said openings and isopropyl-alcoholic solution are used, the former as mask. Thereafter, said film 71 is renewed, openings are provided at a given range, and a plurality of P-type ranges 5 and P-type layer 3 for separation are diffusedly formed in said layer 2 sandwiched between said grooves 91 and 92 and on the wall faces of said grooves 91 and 93 respectively. Nixt, N-type range 6 and N-type draw-out range 4 are provided between said ranges 5 on the wall faces of said groove 92 respectively, and earthing electrode 81, injector 82, gate 83, drain 84 and draw-out electrode 85 for example are formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9790378A JPS5524488A (en) | 1978-08-11 | 1978-08-11 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9790378A JPS5524488A (en) | 1978-08-11 | 1978-08-11 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5524488A true JPS5524488A (en) | 1980-02-21 |
Family
ID=14204679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9790378A Pending JPS5524488A (en) | 1978-08-11 | 1978-08-11 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5524488A (en) |
-
1978
- 1978-08-11 JP JP9790378A patent/JPS5524488A/en active Pending
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