JPS5565461A - Semiconductor switch - Google Patents

Semiconductor switch

Info

Publication number
JPS5565461A
JPS5565461A JP13783578A JP13783578A JPS5565461A JP S5565461 A JPS5565461 A JP S5565461A JP 13783578 A JP13783578 A JP 13783578A JP 13783578 A JP13783578 A JP 13783578A JP S5565461 A JPS5565461 A JP S5565461A
Authority
JP
Japan
Prior art keywords
gate
resistance
poly
resistor
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13783578A
Other languages
Japanese (ja)
Inventor
Jun Ueda
Taiji Usui
Haruo Mori
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13783578A priority Critical patent/JPS5565461A/en
Publication of JPS5565461A publication Critical patent/JPS5565461A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To improve gate sensitivity and dv/dt resistance, by using a poly-Si resistor having a negative or a small positive temperature coefficient between gate and cathode. CONSTITUTION:A pnpn element structure gate 8 and cathode 9 are connected by poly-Si 10, and by feeding transient current to resistor 10, erroneous ignition is prevented. When the resistance is excessively large, there is no effect. Since the temperature coefficient of poly-Si resistor can be controlled by varying the impurity concentration, the characteristics that are influenced by the resistance between gate and cathode, such as, dv/dt resistance, gate sensitivity, holding current, can be designed optimum over the entire range of temperatures. Further, it is, of course, possible to insert poly-Si between gate and anode.
JP13783578A 1978-11-10 1978-11-10 Semiconductor switch Pending JPS5565461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13783578A JPS5565461A (en) 1978-11-10 1978-11-10 Semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13783578A JPS5565461A (en) 1978-11-10 1978-11-10 Semiconductor switch

Publications (1)

Publication Number Publication Date
JPS5565461A true JPS5565461A (en) 1980-05-16

Family

ID=15207934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13783578A Pending JPS5565461A (en) 1978-11-10 1978-11-10 Semiconductor switch

Country Status (1)

Country Link
JP (1) JPS5565461A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857747A (en) * 1981-09-30 1983-04-06 Sharp Corp Semiconductor device
JPS5857748A (en) * 1981-09-30 1983-04-06 Sharp Corp Semiconductor device
JPS5969970A (en) * 1982-10-15 1984-04-20 Nec Home Electronics Ltd semiconductor equipment
JPS6397251U (en) * 1986-12-15 1988-06-23
US5424563A (en) * 1993-12-27 1995-06-13 Harris Corporation Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857747A (en) * 1981-09-30 1983-04-06 Sharp Corp Semiconductor device
JPS5857748A (en) * 1981-09-30 1983-04-06 Sharp Corp Semiconductor device
JPS5969970A (en) * 1982-10-15 1984-04-20 Nec Home Electronics Ltd semiconductor equipment
JPS6397251U (en) * 1986-12-15 1988-06-23
US5424563A (en) * 1993-12-27 1995-06-13 Harris Corporation Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices

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Akimov et al. Temperature Dependence of the Avalanche Breakdown Voltage of Diodes Prepared From Si With a High O Impurity Concentration