JPS558084A - Semiconductor device - Google Patents

Abstract

PURPOSE: To give no influence to a hole by heat pressure when touching by making no section touched to the protracted electrode of semiconductor element of a protracted head wire terminal on the upper hole of the protected and insulating film hole of the element.

CONSTITUTION: An insulating film 12 is set up at a semiconductor plate 11 and on the film is set up an internal wiring layer 13 which is covered by a protected and insulating film 14 to be established. In this film is set up a hole 15 through which a metal layer 16 and a protracted electrode 17 are established being adjacent to the internal wiring layer 13. On the other hand, a protracted terminal 20 is established at a section to be touched to the protracted electrode 17 of the semiconductor element at a pointed head and is designed to make a dented section in a form of a circular better near the center of this terminal 20 at the hole 15 below the elements electrode 17 in order not to put a direct pressure on the hole 15. As a result, a crack doesn't into the metal layer 16 and a metal to metal compound of electrodes 17 and 18 is not formed tu improve reliability.

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