JPS559488A - Method of making semiconductor device - Google Patents
Method of making semiconductor deviceInfo
- Publication number
- JPS559488A JPS559488A JP8337678A JP8337678A JPS559488A JP S559488 A JPS559488 A JP S559488A JP 8337678 A JP8337678 A JP 8337678A JP 8337678 A JP8337678 A JP 8337678A JP S559488 A JPS559488 A JP S559488A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- chip
- header
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
Landscapes
- Die Bonding (AREA)
Abstract
PURPOSE: To improve the characteristics such as low contact resistance by providing the silicon powder including the same conductivity type of impurities as that of a semiconductor chip between the chip and a header upon joining the chip with the header by a Au-Si eutectic technique.
CONSTITUTION: The epitaxial growth of a n-type layer 3 is first allowed to proceed on a p-type Si substrate 2 to isolate the layer 3 by a p-type region 2'; then p-type gate 4, n-type source 5 and drain region 6 are provided in the isolated region; and the back of the substrate 2 is etched to remove the high impurity content layer. Prior to joining the chip 1 made in this way with the header 7 conprising Kovar 8 and Au layer 9 coated thereon, the high concentration boron doped silicon powder 10 is coated on the layer 9. In this manner, boron segregates to provide a low electric resistance layer to the side of the substrate 2 resulting in low contact resistance.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8337678A JPS559488A (en) | 1978-07-07 | 1978-07-07 | Method of making semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8337678A JPS559488A (en) | 1978-07-07 | 1978-07-07 | Method of making semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS559488A true JPS559488A (en) | 1980-01-23 |
Family
ID=13800690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8337678A Pending JPS559488A (en) | 1978-07-07 | 1978-07-07 | Method of making semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS559488A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013121794A1 (en) | 2012-02-15 | 2013-08-22 | Jfe条鋼株式会社 | Soft-nitriding steel and soft-nitrided component using steel as material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4990879A (en) * | 1972-12-28 | 1974-08-30 |
-
1978
- 1978-07-07 JP JP8337678A patent/JPS559488A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4990879A (en) * | 1972-12-28 | 1974-08-30 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013121794A1 (en) | 2012-02-15 | 2013-08-22 | Jfe条鋼株式会社 | Soft-nitriding steel and soft-nitrided component using steel as material |
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