JPS5612745A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5612745A
JPS5612745A JP8702579A JP8702579A JPS5612745A JP S5612745 A JPS5612745 A JP S5612745A JP 8702579 A JP8702579 A JP 8702579A JP 8702579 A JP8702579 A JP 8702579A JP S5612745 A JPS5612745 A JP S5612745A
Authority
JP
Japan
Prior art keywords
pattern
alignment
buried
concave
positioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8702579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252454B2 (2
Inventor
Isamu Takashima
Toru Suganuma
Hisashi Funakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8702579A priority Critical patent/JPS5612745A/ja
Publication of JPS5612745A publication Critical patent/JPS5612745A/ja
Publication of JPS6252454B2 publication Critical patent/JPS6252454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8702579A 1979-07-10 1979-07-10 Production of semiconductor device Granted JPS5612745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8702579A JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8702579A JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5612745A true JPS5612745A (en) 1981-02-07
JPS6252454B2 JPS6252454B2 (2) 1987-11-05

Family

ID=13903409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8702579A Granted JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5612745A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785227A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of semiconductor device
JPS6336033U (2) * 1986-08-22 1988-03-08

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434770A (en) * 1977-08-24 1979-03-14 Nec Corp Semiconductor substrate and manufacture of semiconductor using it

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434770A (en) * 1977-08-24 1979-03-14 Nec Corp Semiconductor substrate and manufacture of semiconductor using it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785227A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of semiconductor device
JPS6336033U (2) * 1986-08-22 1988-03-08

Also Published As

Publication number Publication date
JPS6252454B2 (2) 1987-11-05

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