JPS6252454B2 - - Google Patents

Info

Publication number
JPS6252454B2
JPS6252454B2 JP54087025A JP8702579A JPS6252454B2 JP S6252454 B2 JPS6252454 B2 JP S6252454B2 JP 54087025 A JP54087025 A JP 54087025A JP 8702579 A JP8702579 A JP 8702579A JP S6252454 B2 JPS6252454 B2 JP S6252454B2
Authority
JP
Japan
Prior art keywords
pattern
alignment
buried
unevenness
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54087025A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5612745A (en
Inventor
Isamu Takashima
Tooru Suganuma
Hisashi Funakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8702579A priority Critical patent/JPS5612745A/ja
Publication of JPS5612745A publication Critical patent/JPS5612745A/ja
Publication of JPS6252454B2 publication Critical patent/JPS6252454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8702579A 1979-07-10 1979-07-10 Production of semiconductor device Granted JPS5612745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8702579A JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8702579A JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5612745A JPS5612745A (en) 1981-02-07
JPS6252454B2 true JPS6252454B2 (2) 1987-11-05

Family

ID=13903409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8702579A Granted JPS5612745A (en) 1979-07-10 1979-07-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5612745A (2)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785227A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of semiconductor device
JPS6336033U (2) * 1986-08-22 1988-03-08

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434770A (en) * 1977-08-24 1979-03-14 Nec Corp Semiconductor substrate and manufacture of semiconductor using it

Also Published As

Publication number Publication date
JPS5612745A (en) 1981-02-07

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