JPS564236A - Manufacture of photoresist film pattern - Google Patents
Manufacture of photoresist film patternInfo
- Publication number
- JPS564236A JPS564236A JP7983379A JP7983379A JPS564236A JP S564236 A JPS564236 A JP S564236A JP 7983379 A JP7983379 A JP 7983379A JP 7983379 A JP7983379 A JP 7983379A JP S564236 A JPS564236 A JP S564236A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- photoresist
- mask
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To make a proper pattern of a negative resist on a substrate or on a coating of a substrate having a remarkable stationary wave phenomenon, by providing a thick film on a thin film of a negative resist resist, making a mask of the thick film and applying plasma to change each exposed part of the thin film into ash. CONSTITUTION:A negative photoresist 9 is provided at a very small thickness on a coated film 2 on a semiconductor substrate 1 and baked. The entire surface of the baked photoresist is exposed to light 5. Another photoresist 10 is provided at a large thickness on the former photoresist and baked. A mask 4 is fitted. The photoresist 10 is exposed to light 5 and developed to make a proper pattern 11-13 with no wrinkles and exfoliations. After that, baking is effected. Gas plasma is applied to the thin resist film 9 through the mask 11-13 to change the film into ash to make another proper pattern 14-16 of the resist films 10, 9. The resulting mask 14-16 is used to selectively etch the film 2 and then removed. As a result, a desired pattern 17-19 is produced. The resist pattern of proper shape can thus be made by using the negative photoresists twice, without suffering from the influence of stationary waves or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7983379A JPS564236A (en) | 1979-06-25 | 1979-06-25 | Manufacture of photoresist film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7983379A JPS564236A (en) | 1979-06-25 | 1979-06-25 | Manufacture of photoresist film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS564236A true JPS564236A (en) | 1981-01-17 |
Family
ID=13701203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7983379A Pending JPS564236A (en) | 1979-06-25 | 1979-06-25 | Manufacture of photoresist film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS564236A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100428A (en) * | 1981-12-10 | 1983-06-15 | Matsushita Electronics Corp | Formation of pattern |
| JPS5951527A (en) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | Pattern formation |
| JPS6091639A (en) * | 1983-10-26 | 1985-05-23 | Alps Electric Co Ltd | Formation of photo resist pattern |
| JPS60121416A (en) * | 1983-10-24 | 1985-06-28 | ボ−シユ アンド ロ−ム インコ−ポレイテイド | Sterilization of contact lens by oxygen cleaning |
| US5275945A (en) * | 1991-10-08 | 1994-01-04 | Vista Chemical Company | Alkaline proteases stable in heavy-duty detergent liquids |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080834A (en) * | 1973-11-16 | 1975-07-01 | ||
| JPS50113171A (en) * | 1974-02-13 | 1975-09-05 | ||
| JPS5158072A (en) * | 1974-11-18 | 1976-05-21 | Matsushita Electric Industrial Co Ltd | Handotaisochinoseizohoho |
| JPS5389673A (en) * | 1977-01-19 | 1978-08-07 | Oki Electric Ind Co Ltd | Fine pattern forming method of semiconductor device |
-
1979
- 1979-06-25 JP JP7983379A patent/JPS564236A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080834A (en) * | 1973-11-16 | 1975-07-01 | ||
| JPS50113171A (en) * | 1974-02-13 | 1975-09-05 | ||
| JPS5158072A (en) * | 1974-11-18 | 1976-05-21 | Matsushita Electric Industrial Co Ltd | Handotaisochinoseizohoho |
| JPS5389673A (en) * | 1977-01-19 | 1978-08-07 | Oki Electric Ind Co Ltd | Fine pattern forming method of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100428A (en) * | 1981-12-10 | 1983-06-15 | Matsushita Electronics Corp | Formation of pattern |
| JPS5951527A (en) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | Pattern formation |
| JPS60121416A (en) * | 1983-10-24 | 1985-06-28 | ボ−シユ アンド ロ−ム インコ−ポレイテイド | Sterilization of contact lens by oxygen cleaning |
| JPS6091639A (en) * | 1983-10-26 | 1985-05-23 | Alps Electric Co Ltd | Formation of photo resist pattern |
| US5275945A (en) * | 1991-10-08 | 1994-01-04 | Vista Chemical Company | Alkaline proteases stable in heavy-duty detergent liquids |
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