JPS5646536A - Formation of microminiature electrode - Google Patents

Formation of microminiature electrode

Info

Publication number
JPS5646536A
JPS5646536A JP12219979A JP12219979A JPS5646536A JP S5646536 A JPS5646536 A JP S5646536A JP 12219979 A JP12219979 A JP 12219979A JP 12219979 A JP12219979 A JP 12219979A JP S5646536 A JPS5646536 A JP S5646536A
Authority
JP
Japan
Prior art keywords
electrode
resist
microminiature
region
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12219979A
Other languages
Japanese (ja)
Inventor
Masamichi Omori
Naoki Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12219979A priority Critical patent/JPS5646536A/en
Publication of JPS5646536A publication Critical patent/JPS5646536A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a microminiature electrode by laminating two types of photoresist films having different sensitivities and forming a mask. CONSTITUTION:Photoresists 2a, 2b are laminated on a substrate 1 in such a manner that the resist 2b has higher sensitivitg than the resist 2a. When forming an exposure region 4, the region 4b has wider width than the region 4a. When it is developed, the window 5a is opened to be larger than the window 5b. When electrode materials are deposited as designated by 6 and 7 and the resist mask 2 and the film 7 are removed, a desired microminiature electrode 6 can be obtained.
JP12219979A 1979-09-22 1979-09-22 Formation of microminiature electrode Pending JPS5646536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12219979A JPS5646536A (en) 1979-09-22 1979-09-22 Formation of microminiature electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12219979A JPS5646536A (en) 1979-09-22 1979-09-22 Formation of microminiature electrode

Publications (1)

Publication Number Publication Date
JPS5646536A true JPS5646536A (en) 1981-04-27

Family

ID=14830006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12219979A Pending JPS5646536A (en) 1979-09-22 1979-09-22 Formation of microminiature electrode

Country Status (1)

Country Link
JP (1) JPS5646536A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100432A (en) * 1983-11-05 1985-06-04 Oki Electric Ind Co Ltd Formation for lift-off metal pattern
JP2002139842A (en) * 2000-11-01 2002-05-17 Fujitsu Ltd Pattern forming method and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105326A (en) * 1979-02-07 1980-08-12 Matsushita Electronics Corp Manufacturing method of electrode of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105326A (en) * 1979-02-07 1980-08-12 Matsushita Electronics Corp Manufacturing method of electrode of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100432A (en) * 1983-11-05 1985-06-04 Oki Electric Ind Co Ltd Formation for lift-off metal pattern
JP2002139842A (en) * 2000-11-01 2002-05-17 Fujitsu Ltd Pattern forming method and semiconductor device

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