JPS567476A - Power semiconductor device - Google Patents

Power semiconductor device

Info

Publication number
JPS567476A
JPS567476A JP8370579A JP8370579A JPS567476A JP S567476 A JPS567476 A JP S567476A JP 8370579 A JP8370579 A JP 8370579A JP 8370579 A JP8370579 A JP 8370579A JP S567476 A JPS567476 A JP S567476A
Authority
JP
Japan
Prior art keywords
type
semiconductor
semiconductor layer
gate
fitted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8370579A
Other languages
Japanese (ja)
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8370579A priority Critical patent/JPS567476A/en
Publication of JPS567476A publication Critical patent/JPS567476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To simplify the construction of a circuit for controlling a photocontrol power semiconductor device by incorporating a main semiconductor element and a photosensitive element in a semiconductor wafer. CONSTITUTION:A photo-control power semiconductor device is constituted by the first semiconductor layer 301 through the sixth semiconductor layer 306 of nu-type, P-type, N-type, N-type, P-type and P-type, respectively. by constituting the device as described above, a region including the sixth semiconductor layer 306 is used as a P-gate-type photothyristor 2 which is a main semiconductor switching element, and a region including the fifth semiconductor layer 305 is used as a P-gate-type gate turn-off thyristor 1, and the laminate in the vicinity thereof is used as an antiparallel diode 30. The main electrode ME1 is fitted commonly to the thyristors 2 and 1 and the diode side, and a gate electrode G and a control electrode CE are fitted to the second semiconductor layer 302. Further, a main electrode ME2 is fitted to the third and the first semiconductor layers 303 and 301, respectively. By this organization, light is irradiated to the P-N junction by use of luminous diodes 5 and 5' thereby to control the output of the device.
JP8370579A 1979-06-29 1979-06-29 Power semiconductor device Pending JPS567476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8370579A JPS567476A (en) 1979-06-29 1979-06-29 Power semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8370579A JPS567476A (en) 1979-06-29 1979-06-29 Power semiconductor device

Publications (1)

Publication Number Publication Date
JPS567476A true JPS567476A (en) 1981-01-26

Family

ID=13809900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8370579A Pending JPS567476A (en) 1979-06-29 1979-06-29 Power semiconductor device

Country Status (1)

Country Link
JP (1) JPS567476A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60238089A (en) * 1984-05-11 1985-11-26 Mitsubishi Heavy Ind Ltd Welding robot device for boiler header
EP0702409A1 (en) * 1994-09-16 1996-03-20 STMicroelectronics S.A. Stack of series-connected photosensitive thyristors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51133773A (en) * 1975-05-16 1976-11-19 Hitachi Ltd Electric switch

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51133773A (en) * 1975-05-16 1976-11-19 Hitachi Ltd Electric switch

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60238089A (en) * 1984-05-11 1985-11-26 Mitsubishi Heavy Ind Ltd Welding robot device for boiler header
EP0702409A1 (en) * 1994-09-16 1996-03-20 STMicroelectronics S.A. Stack of series-connected photosensitive thyristors
FR2724768A1 (en) * 1994-09-16 1996-03-22 Sgs Thomson Microelectronics SERIES GROUPING OF PHOTOSENSITIVE THYRISTORS
US5747835A (en) * 1994-09-16 1998-05-05 Sgs-Thomson Microelectronics S.A. Serial arrangement of photothyristors

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