JPS5679448A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5679448A JPS5679448A JP15616279A JP15616279A JPS5679448A JP S5679448 A JPS5679448 A JP S5679448A JP 15616279 A JP15616279 A JP 15616279A JP 15616279 A JP15616279 A JP 15616279A JP S5679448 A JPS5679448 A JP S5679448A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- etching
- thin film
- manner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 10
- 239000010409 thin film Substances 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000001312 dry etching Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To eliminate decrease in the pattern width with a lower etching speed of Al by etching Al with a polycrystalline Si layer interposed between an insulator film and an Al in such a manner as to be identical in type to the Al pattern when the pattern is made on a semiconductor substrate through the insulator film. CONSTITUTION:A semiconductor substrate 1 is coated with an insulator 4 on which a thin film 8 polycrystalline Si is accumulated. Then, a photoresist film 9 with a specified pattern is provided on the film 8. Then, with the film 9 as mask, the thin film undergoes a dry etching or a wet etching to make specified pattern. Thereafter, an Al thin film 11 is applied on the entire surface including the pattern 10 and a resist film 12 is provided thereon corresponding to the pattern 10 in such a manner as to be identical in type to the pattern. With this film 12 as mask, the thin film 11 on the film 4 exposed is etched away in such a manner that a wiring pattern comprising a polycrystalline Si layer 10 and an Al thin film 13 is left on the film 4. In this manner, the etching of Al is performed only on the film 4 at a low speed to obtain the wiring width true to the designed dimensions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15616279A JPS5679448A (en) | 1979-11-30 | 1979-11-30 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15616279A JPS5679448A (en) | 1979-11-30 | 1979-11-30 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5679448A true JPS5679448A (en) | 1981-06-30 |
Family
ID=15621697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15616279A Pending JPS5679448A (en) | 1979-11-30 | 1979-11-30 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5679448A (en) |
-
1979
- 1979-11-30 JP JP15616279A patent/JPS5679448A/en active Pending
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