JPS5687362A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5687362A
JPS5687362A JP16348979A JP16348979A JPS5687362A JP S5687362 A JPS5687362 A JP S5687362A JP 16348979 A JP16348979 A JP 16348979A JP 16348979 A JP16348979 A JP 16348979A JP S5687362 A JPS5687362 A JP S5687362A
Authority
JP
Japan
Prior art keywords
film
region
field region
gate
oxidation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16348979A
Other languages
Japanese (ja)
Inventor
Osamu Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16348979A priority Critical patent/JPS5687362A/en
Publication of JPS5687362A publication Critical patent/JPS5687362A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To reduce the width of the field region of the subject semiconductor device by a method wherein the oxidation film, containing the impurities of the same conductive type as the substrate, is formed on the substrate corresponding to the field region and then a gate oxidation film is formed, while a high-density region is formed in self-matching manner by the heat treatment being performed when said oxidation film was formed. CONSTITUTION:On the P<-> substrate 9, an SiO2 film 10, including P type impurities such as boron and the like, is formed and then the film 10 is removed leaving the field region 3'. Then a gate oxidation film is grown. The boron contained in the SiO2 film 10 is diffused in self-matching by the heat treatment performed when growing the film 11 and a P<+> region 12 is formed. Using the region 12 as the field region, an MOSFETTr1, having a gate 15, a source, drains 13 and 14, and an MOSFETTr2, having a gate 15', a source, drains 13' and 14', are formed. These field regions are formed by leaving the resist, so the width of the field region can be reduced considerably.
JP16348979A 1979-12-18 1979-12-18 Manufacture of semiconductor device Pending JPS5687362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16348979A JPS5687362A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16348979A JPS5687362A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687362A true JPS5687362A (en) 1981-07-15

Family

ID=15774828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16348979A Pending JPS5687362A (en) 1979-12-18 1979-12-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169977A (en) * 1982-03-30 1983-10-06 Canon Inc Manufacture of thin film transistor
JPS63108745A (en) * 1986-10-27 1988-05-13 Nec Corp Mos type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169977A (en) * 1982-03-30 1983-10-06 Canon Inc Manufacture of thin film transistor
JPS63108745A (en) * 1986-10-27 1988-05-13 Nec Corp Mos type semiconductor device

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