JPS5690538A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5690538A
JPS5690538A JP16724579A JP16724579A JPS5690538A JP S5690538 A JPS5690538 A JP S5690538A JP 16724579 A JP16724579 A JP 16724579A JP 16724579 A JP16724579 A JP 16724579A JP S5690538 A JPS5690538 A JP S5690538A
Authority
JP
Japan
Prior art keywords
wiring
substrate
region
layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16724579A
Other languages
Japanese (ja)
Inventor
Masataka Shinguu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16724579A priority Critical patent/JPS5690538A/en
Publication of JPS5690538A publication Critical patent/JPS5690538A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To avoid contact between first and second layer wirings by withdrawing the first layer wiring from the top thereof among those formed on an MOS transistor. CONSTITUTION:An N<+> type region is diffused into an N type Si substrate 1 to withdraw the substrate and P<+> type regions to serve as source and drain regions and entirely coated with a field insulator film. With a window opened, the first layer Al electrodes 3 are formed on the substrate withdrawing region and the source region and the first layer Al wiring on the drain region. Then, a gate electrode G is provided somewhere between the source and drain regions and entirely covered with a PSG inter lamilar insulator film 4. Thereafer, an opening is provided in the film 4 and the second layer Al wiring 5 is mounted on a wiring 3 connected to the drain region, a condition in which the wiring 3 provides on the substrate drawing region is withdrawn from the side of the substrate 1. This avoids contact between the wires 3 and 5, on withdrawn from the side and the other from the top thereof.
JP16724579A 1979-12-22 1979-12-22 Semiconductor device Pending JPS5690538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16724579A JPS5690538A (en) 1979-12-22 1979-12-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16724579A JPS5690538A (en) 1979-12-22 1979-12-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5690538A true JPS5690538A (en) 1981-07-22

Family

ID=15846144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16724579A Pending JPS5690538A (en) 1979-12-22 1979-12-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5690538A (en)

Similar Documents

Publication Publication Date Title
JPS56162875A (en) Semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5690538A (en) Semiconductor device
JPS56110264A (en) High withstand voltage mos transistor
JPS57204171A (en) Semiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5558561A (en) Semiconductor capacitance element
JPS5660052A (en) Semiconductor memory device
JPS53109487A (en) Manufacture for semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS55130170A (en) Semiconductor device and method of fabricating the same
JPS56108267A (en) Insulated-gate field-effect semiconductor device
JPS5772386A (en) Junction type field-effect semiconductor device
JPS5688366A (en) Semiconductor device
JPS6437058A (en) Insulated-gate field-effect transistor
JPS5736865A (en) Semiconductor device
JPS5552262A (en) Mos semiconductor device
JPS5660053A (en) Manufacture of semiconductor memory device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS566464A (en) Semiconductor device and manufacture thereof
JPS52130580A (en) High densityintegrated circuit device
JPS5660051A (en) Semiconductor memory device
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS57106153A (en) Semiconductor device
JPS5636165A (en) Insulated gate type field-effect transistor