JPS57102014A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57102014A
JPS57102014A JP55178418A JP17841880A JPS57102014A JP S57102014 A JPS57102014 A JP S57102014A JP 55178418 A JP55178418 A JP 55178418A JP 17841880 A JP17841880 A JP 17841880A JP S57102014 A JPS57102014 A JP S57102014A
Authority
JP
Japan
Prior art keywords
difference
level
film
hole
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55178418A
Other languages
Japanese (ja)
Inventor
Toshinobu Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55178418A priority Critical patent/JPS57102014A/en
Publication of JPS57102014A publication Critical patent/JPS57102014A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a wiring without disconnection at a portion with difference in level by improving the forming means of a wiring connected to a conductive region through a contact hole. CONSTITUTION:After contact holes 301-303 are opened by selective etching of a CVD-SiO2 film 28, an Al-Si alloy film is formed leaving a resist pattern 29. Then resist films 321'-323' are formed on the holos 301-303 and the exposed alloy film 31 on the pattern 29 is removed by etching using the resist films 321'-323' as masks. Then alloy films 31' are left in the contact holes 301-303 which have steep inside walls opened by RIE method, so that difference in level of the hole can be reduced. After that the hole surface is covered by an Al film 33 and wirings 34-36 without discontinuity by difference in level can be formed to the holes 301-303 by patterning.
JP55178418A 1980-12-17 1980-12-17 Manufacture of semiconductor device Pending JPS57102014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55178418A JPS57102014A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55178418A JPS57102014A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57102014A true JPS57102014A (en) 1982-06-24

Family

ID=16048144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55178418A Pending JPS57102014A (en) 1980-12-17 1980-12-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102014A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189678A (en) * 1983-04-13 1984-10-27 Fujitsu Ltd Semiconductor device and manufacture thereof
EP1033757A3 (en) * 1999-02-04 2002-03-06 Hitachi, Ltd. Insulated gate bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189678A (en) * 1983-04-13 1984-10-27 Fujitsu Ltd Semiconductor device and manufacture thereof
EP1033757A3 (en) * 1999-02-04 2002-03-06 Hitachi, Ltd. Insulated gate bipolar transistor

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