JPS57155726A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57155726A
JPS57155726A JP56041327A JP4132781A JPS57155726A JP S57155726 A JPS57155726 A JP S57155726A JP 56041327 A JP56041327 A JP 56041327A JP 4132781 A JP4132781 A JP 4132781A JP S57155726 A JPS57155726 A JP S57155726A
Authority
JP
Japan
Prior art keywords
laser
film
silicon
cap
si2n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56041327A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0343769B2 (2
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56041327A priority Critical patent/JPS57155726A/ja
Publication of JPS57155726A publication Critical patent/JPS57155726A/ja
Publication of JPH0343769B2 publication Critical patent/JPH0343769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP56041327A 1981-03-20 1981-03-20 Manufacture of semiconductor device Granted JPS57155726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56041327A JPS57155726A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56041327A JPS57155726A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57155726A true JPS57155726A (en) 1982-09-25
JPH0343769B2 JPH0343769B2 (2) 1991-07-03

Family

ID=12605418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56041327A Granted JPS57155726A (en) 1981-03-20 1981-03-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57155726A (2)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187030A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置の製造方法
JPS60245124A (ja) * 1984-05-18 1985-12-04 Sony Corp 半導体装置の製法
JPS6178119A (ja) * 1984-09-25 1986-04-21 Sony Corp 半導体の製造方法
JPS6427231A (en) * 1986-06-30 1989-01-30 Nec Corp Manufacture of semiconductor device
JPH0371626A (ja) * 1989-08-10 1991-03-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH03155126A (ja) * 1989-11-13 1991-07-03 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH06220342A (ja) * 1993-01-27 1994-08-09 Taoka Chem Co Ltd コバルト含有アゾ化合物、その用途及び製造方法
JPH0758342A (ja) * 1994-07-11 1995-03-03 Sony Corp 薄膜トランジスタの製法
JPH0758341A (ja) * 1994-07-11 1995-03-03 Sony Corp 薄膜トランジスタの製法
JPH07147259A (ja) * 1994-07-11 1995-06-06 Sony Corp 薄膜トランジスタの製法
JPH07176499A (ja) * 1994-06-21 1995-07-14 Semiconductor Energy Lab Co Ltd 光照射装置
JPH09199421A (ja) * 1996-09-26 1997-07-31 Semiconductor Energy Lab Co Ltd 光照射方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam
JPS55162224A (en) * 1979-06-06 1980-12-17 Toshiba Corp Preparation of semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60187030A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置の製造方法
JPS60245124A (ja) * 1984-05-18 1985-12-04 Sony Corp 半導体装置の製法
JPS6178119A (ja) * 1984-09-25 1986-04-21 Sony Corp 半導体の製造方法
JPS6427231A (en) * 1986-06-30 1989-01-30 Nec Corp Manufacture of semiconductor device
JPH0371626A (ja) * 1989-08-10 1991-03-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH03155126A (ja) * 1989-11-13 1991-07-03 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH06220342A (ja) * 1993-01-27 1994-08-09 Taoka Chem Co Ltd コバルト含有アゾ化合物、その用途及び製造方法
JPH07176499A (ja) * 1994-06-21 1995-07-14 Semiconductor Energy Lab Co Ltd 光照射装置
JPH0758342A (ja) * 1994-07-11 1995-03-03 Sony Corp 薄膜トランジスタの製法
JPH0758341A (ja) * 1994-07-11 1995-03-03 Sony Corp 薄膜トランジスタの製法
JPH07147259A (ja) * 1994-07-11 1995-06-06 Sony Corp 薄膜トランジスタの製法
JPH09199421A (ja) * 1996-09-26 1997-07-31 Semiconductor Energy Lab Co Ltd 光照射方法

Also Published As

Publication number Publication date
JPH0343769B2 (2) 1991-07-03

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