JPS57173934A - Manufacture of indium-antimony system compound crystal semiconductor - Google Patents
Manufacture of indium-antimony system compound crystal semiconductorInfo
- Publication number
- JPS57173934A JPS57173934A JP56058724A JP5872481A JPS57173934A JP S57173934 A JPS57173934 A JP S57173934A JP 56058724 A JP56058724 A JP 56058724A JP 5872481 A JP5872481 A JP 5872481A JP S57173934 A JPS57173934 A JP S57173934A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- crystal semiconductor
- compound crystal
- deposition
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3422—Antimonides
Landscapes
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058724A JPS57173934A (en) | 1981-04-18 | 1981-04-18 | Manufacture of indium-antimony system compound crystal semiconductor |
| US06/361,939 US4468415A (en) | 1981-03-30 | 1982-03-25 | Indium-antimony complex crystal semiconductor and process for production thereof |
| EP82102605A EP0062818B2 (fr) | 1981-03-30 | 1982-03-27 | Procédé de fabrication d un élément Hall ou d un élément magnetoresistif comportant un semiconducteur à structure cristalline complexe d antimonieure d indium |
| DE8282102605T DE3271874D1 (en) | 1981-03-30 | 1982-03-27 | Indium-antimony complex crystal semiconductor and process for production thereof |
| AT82102605T ATE20629T1 (de) | 1981-03-30 | 1982-03-27 | Indium-antimon-halbleiter mit komplexer kristalliner struktur und verfahren zu seiner herstellung. |
| KR8201347A KR860000161B1 (ko) | 1981-03-30 | 1982-03-29 | 인듐 안티몬계 복합 결정반도체 및 그 제조방법 |
| US06/620,645 US4539178A (en) | 1981-03-30 | 1984-06-14 | Indium-antimony complex crystal semiconductor and process for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058724A JPS57173934A (en) | 1981-04-18 | 1981-04-18 | Manufacture of indium-antimony system compound crystal semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57173934A true JPS57173934A (en) | 1982-10-26 |
| JPH0113212B2 JPH0113212B2 (fr) | 1989-03-03 |
Family
ID=13092443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56058724A Granted JPS57173934A (en) | 1981-03-30 | 1981-04-18 | Manufacture of indium-antimony system compound crystal semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57173934A (fr) |
-
1981
- 1981-04-18 JP JP56058724A patent/JPS57173934A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0113212B2 (fr) | 1989-03-03 |
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