JPS57192082A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57192082A
JPS57192082A JP56076551A JP7655181A JPS57192082A JP S57192082 A JPS57192082 A JP S57192082A JP 56076551 A JP56076551 A JP 56076551A JP 7655181 A JP7655181 A JP 7655181A JP S57192082 A JPS57192082 A JP S57192082A
Authority
JP
Japan
Prior art keywords
region
type
moreover
regions
glass film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56076551A
Other languages
Japanese (ja)
Inventor
Kanji Yo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56076551A priority Critical patent/JPS57192082A/en
Publication of JPS57192082A publication Critical patent/JPS57192082A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce size of element, to enhance integration of a semiconductor device, and moreover to make the device to be enabled to operate at a low voltage by a method wherein the impurities implanted region is formed on the surface side as to make the region surrounded with the gate region to form the channel. CONSTITUTION:The N<+> type semiconductor regions 4, 5 to constitute the gate regions are formed in the P well 2. Moreover ion implantation of P type impurities is performed, and the P<+> type ion implanted region 7 having the P<+> type ohmic contact region 6 being interposed between the gate regions 4, 5, and the low concentration N<-> type semiconductor regions 8, 9 are formed. An SiO2 film 11 is formed, and moreover a phosphorus silicate glass film 12 is adhered on the whole surface. A drain electrode 14 is provided through a contact hole 13 in the glass film 12 thereof, and a source electrode 15 is provided penetrating the glass film 12 and the SiO2 film 11. Accordingly the vertical JFET having the channel between the gate regions 4, 5 is constituted.
JP56076551A 1981-05-22 1981-05-22 Semiconductor device Pending JPS57192082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076551A JPS57192082A (en) 1981-05-22 1981-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076551A JPS57192082A (en) 1981-05-22 1981-05-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57192082A true JPS57192082A (en) 1982-11-26

Family

ID=13608390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076551A Pending JPS57192082A (en) 1981-05-22 1981-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57192082A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049508A (en) * 2004-08-03 2006-02-16 Nikon Corp Solid-state imaging device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118986A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Semiconductor device
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118986A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Semiconductor device
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049508A (en) * 2004-08-03 2006-02-16 Nikon Corp Solid-state imaging device

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