JPS574156A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS574156A
JPS574156A JP7799180A JP7799180A JPS574156A JP S574156 A JPS574156 A JP S574156A JP 7799180 A JP7799180 A JP 7799180A JP 7799180 A JP7799180 A JP 7799180A JP S574156 A JPS574156 A JP S574156A
Authority
JP
Japan
Prior art keywords
electric pole
layer
semiconductor device
film
pole pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7799180A
Other languages
Japanese (ja)
Inventor
Masuo Osuga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7799180A priority Critical patent/JPS574156A/en
Publication of JPS574156A publication Critical patent/JPS574156A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To provide a stable characteristic and improve a reliability of the semiconductor device by a method an electric pole pattern of connection electric pole layer for forming a multilayer electric pole structure is made as an electrode structure smaller than an electric pole pattern in a lower barrier metallic layer. CONSTITUTION:Insulative film 2 is selectively removed, open holes are provided in the base area 3 and the emitter area 4 so as to form a platinum silicide layer 5. Then, a thin titanium film 6 is formed and a platinum thin film 7 in the barrier layer is formed under a spattering by a photo-resist method. Then, a masking is performed by the photo-resist method so as to form a metalic thin film 8 for a connection electric pole. In this case, as an electric pole pattern 8, a mask smaller than the electric pole pattern 7 is applied. Thereby, a semiconductor device having a high reliability may be made, metal piece and metal burrs being not contacted with other electric poles caused by heat and shock during a mounting and a bonding operation, and some metallic materials being not floated in the insulative film.
JP7799180A 1980-06-10 1980-06-10 Semiconductor device Pending JPS574156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7799180A JPS574156A (en) 1980-06-10 1980-06-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7799180A JPS574156A (en) 1980-06-10 1980-06-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS574156A true JPS574156A (en) 1982-01-09

Family

ID=13649284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7799180A Pending JPS574156A (en) 1980-06-10 1980-06-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS574156A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191467A (en) * 1987-10-02 1989-04-11 Asahi Glass Co Ltd Thin film transistor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117550A (en) * 1976-03-30 1977-10-03 Sony Corp Electrode formation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117550A (en) * 1976-03-30 1977-10-03 Sony Corp Electrode formation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191467A (en) * 1987-10-02 1989-04-11 Asahi Glass Co Ltd Thin film transistor substrate

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