JPS577165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577165A
JPS577165A JP8203580A JP8203580A JPS577165A JP S577165 A JPS577165 A JP S577165A JP 8203580 A JP8203580 A JP 8203580A JP 8203580 A JP8203580 A JP 8203580A JP S577165 A JPS577165 A JP S577165A
Authority
JP
Japan
Prior art keywords
layer
electron
thickness
depletion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8203580A
Other languages
Japanese (ja)
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8203580A priority Critical patent/JPS577165A/en
Priority to EP88119563A priority patent/EP0317993A1/en
Priority to CA000367469A priority patent/CA1145482A/en
Priority to EP80304697A priority patent/EP0033037B1/en
Priority to DE8080304697T priority patent/DE3072175D1/en
Priority to US06/220,968 priority patent/US4424525A/en
Publication of JPS577165A publication Critical patent/JPS577165A/en
Priority to US06/869,669 priority patent/USRE33584E/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To control the impedance of a conductive path between separately provided two electrodes by controlling the electron density of an electron accumulation layer occurring around a hetero junction surface by a difference in electron affinity by the voltage in a control electrode. CONSTITUTION:A nonadditive or N<-> type GaAs channel layer 22 and an N<+> type Al0.3Ga0.7As electron supply layer 21 are epitaxially formed on an insulating substrate 20. After applying the removal of etching to the layer 21 by consisting an Al electrode 30 as a mask, the N<+> layer 22' is formed by ion injection to provide Al electrodes 31, 32. The N type Al0.3Ga0.7 makes a depletion layer having a Schottky barrier of VD1=1.5V and a thickness of about d1=550Angstrom between Al and also a depletion layer having a band gap of VD2=0.4V and a thickness of d2 280Angstrom . Al0.3Ga0.7As is epsilon=11 and d0<d1+d2 is formed when the thickness d0 of the layer 21 is composed as 800Angstrom and the layer 21 is completely depleted and an electron accumulation layer is formed in the channel layer 22 to function as a depletion FET and switching speed is improved, while d0 has a predetermined relation with VD1, VD2.
JP8203580A 1979-12-28 1980-06-17 Semiconductor device Pending JPS577165A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8203580A JPS577165A (en) 1980-06-17 1980-06-17 Semiconductor device
EP88119563A EP0317993A1 (en) 1979-12-28 1980-12-23 Heterojunction semiconductor devices
CA000367469A CA1145482A (en) 1979-12-28 1980-12-23 High electron mobility single heterojunction semiconductor device
EP80304697A EP0033037B1 (en) 1979-12-28 1980-12-23 Heterojunction semiconductor devices
DE8080304697T DE3072175D1 (en) 1979-12-28 1980-12-23 SEMICONDUCTOR DEVICES WITH HETEROUITION.
US06/220,968 US4424525A (en) 1979-12-28 1980-12-29 High electron mobility single heterojunction semiconductor devices
US06/869,669 USRE33584E (en) 1979-12-28 1986-06-02 High electron mobility single heterojunction semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8203580A JPS577165A (en) 1980-06-17 1980-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577165A true JPS577165A (en) 1982-01-14

Family

ID=13763264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8203580A Pending JPS577165A (en) 1979-12-28 1980-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577165A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740981A (en) * 1980-08-25 1982-03-06 Nippon Telegr & Teleph Corp <Ntt> Ultra-high speed semiconductor device
JPS5773979A (en) * 1980-10-27 1982-05-08 Nec Corp Field effect transistor
JPS5795672A (en) * 1980-10-14 1982-06-14 Thomson Csf Field effect transistor with high breaking frequency
JPS57145420A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor delay line and its driving method
JPS58147171A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Manufacture of semiconductor device
JPS58162070A (en) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd Field effect transistor
JPS58170071A (en) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS59969A (en) * 1982-06-25 1984-01-06 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS5913376A (en) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor thin film having hetero junction
JPS5929462A (en) * 1982-08-10 1984-02-16 Mitsubishi Electric Corp heterojunction element
JPS60127765A (en) * 1983-12-15 1985-07-08 Nec Corp field effect element
JPS60148170A (en) * 1984-01-12 1985-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS6174327A (en) * 1984-09-14 1986-04-16 エイ・ティ・アンド・ティ・コーポレーション superlattice device
JPS6197869A (en) * 1984-10-18 1986-05-16 Nec Corp field effect transistor
JPS61161773A (en) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd Field effect transistor
US4732870A (en) * 1984-06-18 1988-03-22 Fujitsu Limited Method of making complementary field effect transistors
JPS63187668A (en) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン field effect transistor
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same
JPH01128423A (en) * 1987-11-12 1989-05-22 Sharp Corp Semiconductor device
JPH01161874A (en) * 1987-12-18 1989-06-26 Hitachi Ltd Semiconductor device and its manufacturing method
JPH02330A (en) * 1988-11-11 1990-01-05 Nec Corp Field effect transistor

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740981A (en) * 1980-08-25 1982-03-06 Nippon Telegr & Teleph Corp <Ntt> Ultra-high speed semiconductor device
JPS5795672A (en) * 1980-10-14 1982-06-14 Thomson Csf Field effect transistor with high breaking frequency
JPS5773979A (en) * 1980-10-27 1982-05-08 Nec Corp Field effect transistor
JPS57145420A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor delay line and its driving method
JPS58147171A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Manufacture of semiconductor device
JPS58162070A (en) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd Field effect transistor
JPS58170071A (en) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS59969A (en) * 1982-06-25 1984-01-06 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
JPS5913376A (en) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor thin film having hetero junction
JPS5929462A (en) * 1982-08-10 1984-02-16 Mitsubishi Electric Corp heterojunction element
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
JPS60127765A (en) * 1983-12-15 1985-07-08 Nec Corp field effect element
JPS60148170A (en) * 1984-01-12 1985-08-05 Fujitsu Ltd Manufacture of semiconductor device
US4732870A (en) * 1984-06-18 1988-03-22 Fujitsu Limited Method of making complementary field effect transistors
JPS6174327A (en) * 1984-09-14 1986-04-16 エイ・ティ・アンド・ティ・コーポレーション superlattice device
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same
JPS6197869A (en) * 1984-10-18 1986-05-16 Nec Corp field effect transistor
JPS61161773A (en) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd Field effect transistor
JPS63187668A (en) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン field effect transistor
JPH01128423A (en) * 1987-11-12 1989-05-22 Sharp Corp Semiconductor device
JPH01161874A (en) * 1987-12-18 1989-06-26 Hitachi Ltd Semiconductor device and its manufacturing method
JPH02330A (en) * 1988-11-11 1990-01-05 Nec Corp Field effect transistor

Similar Documents

Publication Publication Date Title
JPS577165A (en) Semiconductor device
JPS5754370A (en) Insulating gate type transistor
CA2054795A1 (en) Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPS5676574A (en) Schottky injection electrode type semiconductor device
JPS5595370A (en) Compound semiconductor field-effect transistor
JPS5768073A (en) Field effect transistor
JPS5726472A (en) Semiconductor device
JPS575359A (en) Semiconductor device
JPS55108768A (en) Electrostatic induction thyristor
JPS6453476A (en) Superconducting three-terminal element and manufacture thereof
IE792474L (en) Switching device
JPS5526624A (en) Semiconductor device
JPS5730368A (en) Tunnel fet
JPS54143078A (en) Field effect switching element
JPS57103362A (en) Field effect transistor
JPS6489372A (en) Semiconductor device
JPS5713773A (en) Semiconductor device
JPS6467970A (en) Thin film transistor
JPS5541749A (en) Injection-type laser device
JPS54105983A (en) Lateral field effect transistor
JPS57197869A (en) Semiconductor device
JPS57147272A (en) Semiconductor element
JPS5649576A (en) Schottky diode
JPS5691472A (en) High-voltage resisting mos type semiconductor
JPS57192083A (en) Semiconductor device