JPS577165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS577165A
JPS577165A JP8203580A JP8203580A JPS577165A JP S577165 A JPS577165 A JP S577165A JP 8203580 A JP8203580 A JP 8203580A JP 8203580 A JP8203580 A JP 8203580A JP S577165 A JPS577165 A JP S577165A
Authority
JP
Japan
Prior art keywords
layer
electron
thickness
depletion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8203580A
Other languages
English (en)
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8203580A priority Critical patent/JPS577165A/ja
Priority to EP88119563A priority patent/EP0317993A1/en
Priority to CA000367469A priority patent/CA1145482A/en
Priority to EP80304697A priority patent/EP0033037B1/en
Priority to DE8080304697T priority patent/DE3072175D1/de
Priority to US06/220,968 priority patent/US4424525A/en
Publication of JPS577165A publication Critical patent/JPS577165A/ja
Priority to US06/869,669 priority patent/USRE33584E/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP8203580A 1979-12-28 1980-06-17 Semiconductor device Pending JPS577165A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8203580A JPS577165A (en) 1980-06-17 1980-06-17 Semiconductor device
EP88119563A EP0317993A1 (en) 1979-12-28 1980-12-23 Heterojunction semiconductor devices
CA000367469A CA1145482A (en) 1979-12-28 1980-12-23 High electron mobility single heterojunction semiconductor device
EP80304697A EP0033037B1 (en) 1979-12-28 1980-12-23 Heterojunction semiconductor devices
DE8080304697T DE3072175D1 (de) 1979-12-28 1980-12-23 Halbleitervorrichtungen mit heterouebergang.
US06/220,968 US4424525A (en) 1979-12-28 1980-12-29 High electron mobility single heterojunction semiconductor devices
US06/869,669 USRE33584E (en) 1979-12-28 1986-06-02 High electron mobility single heterojunction semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8203580A JPS577165A (en) 1980-06-17 1980-06-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS577165A true JPS577165A (en) 1982-01-14

Family

ID=13763264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8203580A Pending JPS577165A (en) 1979-12-28 1980-06-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS577165A (ja)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740981A (en) * 1980-08-25 1982-03-06 Nippon Telegr & Teleph Corp <Ntt> Ultra-high speed semiconductor device
JPS5773979A (en) * 1980-10-27 1982-05-08 Nec Corp Field effect transistor
JPS5795672A (en) * 1980-10-14 1982-06-14 Thomson Csf Field effect transistor with high breaking frequency
JPS57145420A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor delay line and its driving method
JPS58147171A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
JPS58162070A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS58170071A (ja) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
JPS59969A (ja) * 1982-06-25 1984-01-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタ
JPS5913376A (ja) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合を有する半導体薄膜
JPS5929462A (ja) * 1982-08-10 1984-02-16 Mitsubishi Electric Corp ヘテロ接合素子
JPS60127765A (ja) * 1983-12-15 1985-07-08 Nec Corp 電界効果型素子
JPS60148170A (ja) * 1984-01-12 1985-08-05 Fujitsu Ltd 半導体装置の製造方法
JPS6174327A (ja) * 1984-09-14 1986-04-16 エイ・ティ・アンド・ティ・コーポレーション 超格子デバイス
JPS6197869A (ja) * 1984-10-18 1986-05-16 Nec Corp 電界効果トランジスタ
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US4732870A (en) * 1984-06-18 1988-03-22 Fujitsu Limited Method of making complementary field effect transistors
JPS63187668A (ja) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 電界効果トランジスタ
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same
JPH01128423A (ja) * 1987-11-12 1989-05-22 Sharp Corp 半導体装置
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
JPH02330A (ja) * 1988-11-11 1990-01-05 Nec Corp 電界効果トランジスタ

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740981A (en) * 1980-08-25 1982-03-06 Nippon Telegr & Teleph Corp <Ntt> Ultra-high speed semiconductor device
JPS5795672A (en) * 1980-10-14 1982-06-14 Thomson Csf Field effect transistor with high breaking frequency
JPS5773979A (en) * 1980-10-27 1982-05-08 Nec Corp Field effect transistor
JPS57145420A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor delay line and its driving method
JPS58147171A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
JPS58162070A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS58170071A (ja) * 1982-03-31 1983-10-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
JPS59969A (ja) * 1982-06-25 1984-01-06 Nippon Telegr & Teleph Corp <Ntt> 電界効果型トランジスタ
JPS5913376A (ja) * 1982-07-13 1984-01-24 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合を有する半導体薄膜
JPS5929462A (ja) * 1982-08-10 1984-02-16 Mitsubishi Electric Corp ヘテロ接合素子
US4795717A (en) * 1983-06-09 1989-01-03 Fujitsu Limited Method for producing semiconductor device
JPS60127765A (ja) * 1983-12-15 1985-07-08 Nec Corp 電界効果型素子
JPS60148170A (ja) * 1984-01-12 1985-08-05 Fujitsu Ltd 半導体装置の製造方法
US4732870A (en) * 1984-06-18 1988-03-22 Fujitsu Limited Method of making complementary field effect transistors
JPS6174327A (ja) * 1984-09-14 1986-04-16 エイ・ティ・アンド・ティ・コーポレーション 超格子デバイス
US4805005A (en) * 1984-10-03 1989-02-14 Hitachi, Ltd. Semiconductor device and manufacturing method of the same
JPS6197869A (ja) * 1984-10-18 1986-05-16 Nec Corp 電界効果トランジスタ
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS63187668A (ja) * 1987-01-20 1988-08-03 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 電界効果トランジスタ
JPH01128423A (ja) * 1987-11-12 1989-05-22 Sharp Corp 半導体装置
JPH01161874A (ja) * 1987-12-18 1989-06-26 Hitachi Ltd 半導体装置とその製造方法
JPH02330A (ja) * 1988-11-11 1990-01-05 Nec Corp 電界効果トランジスタ

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