JPS5776846A - Surface treating method for semiconductor - Google Patents

Surface treating method for semiconductor

Info

Publication number
JPS5776846A
JPS5776846A JP55153129A JP15312980A JPS5776846A JP S5776846 A JPS5776846 A JP S5776846A JP 55153129 A JP55153129 A JP 55153129A JP 15312980 A JP15312980 A JP 15312980A JP S5776846 A JPS5776846 A JP S5776846A
Authority
JP
Japan
Prior art keywords
semiconductor
rays
gas
laser
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55153129A
Other languages
English (en)
Inventor
Masanao Itoga
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55153129A priority Critical patent/JPS5776846A/ja
Publication of JPS5776846A publication Critical patent/JPS5776846A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Drying Of Semiconductors (AREA)
JP55153129A 1980-10-31 1980-10-31 Surface treating method for semiconductor Pending JPS5776846A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153129A JPS5776846A (en) 1980-10-31 1980-10-31 Surface treating method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153129A JPS5776846A (en) 1980-10-31 1980-10-31 Surface treating method for semiconductor

Publications (1)

Publication Number Publication Date
JPS5776846A true JPS5776846A (en) 1982-05-14

Family

ID=15555612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153129A Pending JPS5776846A (en) 1980-10-31 1980-10-31 Surface treating method for semiconductor

Country Status (1)

Country Link
JP (1) JPS5776846A (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129425A (ja) * 1983-01-14 1984-07-25 Toshiba Corp ドライエツチング装置
JPS59201426A (ja) * 1983-04-29 1984-11-15 Sony Corp 半導体基体の処理方法
JPS6039238U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS61171135A (ja) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp プラズマエッチング装置の制御方法
JPS62109448U (ja) * 1985-12-27 1987-07-13
JPS6320833A (ja) * 1986-07-14 1988-01-28 Toshiba Corp アツシング装置
JPH027522A (ja) * 1988-06-27 1990-01-11 Mitsubishi Electric Corp 半導体装置の製造方法およびその装置
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
JPH02248041A (ja) * 1989-03-20 1990-10-03 Mitsubishi Electric Corp レーザ光照射装置
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
WO1993019888A1 (en) * 1992-03-31 1993-10-14 Cauldron Limited Partnership Removal of surface contaminants by irradiation
US5496506A (en) * 1992-09-21 1996-03-05 Sony Corporation Process for removing fine particles
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113329A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Light dry etching
JPS55118636A (en) * 1979-03-08 1980-09-11 Toshiba Corp Gas etching method and device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113329A (en) * 1979-02-23 1980-09-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Light dry etching
JPS55118636A (en) * 1979-03-08 1980-09-11 Toshiba Corp Gas etching method and device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129425A (ja) * 1983-01-14 1984-07-25 Toshiba Corp ドライエツチング装置
JPS59201426A (ja) * 1983-04-29 1984-11-15 Sony Corp 半導体基体の処理方法
JPS6039238U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS61171135A (ja) * 1985-01-24 1986-08-01 Mitsubishi Electric Corp プラズマエッチング装置の制御方法
JPS62109448U (ja) * 1985-12-27 1987-07-13
JPS6320833A (ja) * 1986-07-14 1988-01-28 Toshiba Corp アツシング装置
JPH027522A (ja) * 1988-06-27 1990-01-11 Mitsubishi Electric Corp 半導体装置の製造方法およびその装置
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
WO1990000812A1 (en) * 1988-07-08 1990-01-25 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
JPH02248041A (ja) * 1989-03-20 1990-10-03 Mitsubishi Electric Corp レーザ光照射装置
WO1993019888A1 (en) * 1992-03-31 1993-10-14 Cauldron Limited Partnership Removal of surface contaminants by irradiation
US5496506A (en) * 1992-09-21 1996-03-05 Sony Corporation Process for removing fine particles
US5628954A (en) * 1992-09-21 1997-05-13 Sony Corporation Process for detecting fine particles

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