JPS5776872A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: JPS5776872A
Authority: JP; Japan
Prior art keywords: type; layer; iil; impurity; layers
Prior art date: 1980-10-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP55152065A

Other languages

English (en)

Inventor

Takashi Yamaguchi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-10-31

Filing date

1980-10-31

Publication date

1982-05-14

1980-10-31 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1980-10-31 Priority to JP55152065A priority Critical patent/JPS5776872A/ja

1982-05-14 Publication of JPS5776872A publication Critical patent/JPS5776872A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
239000012535 impurity Substances 0.000 abstract 3
238000009792 diffusion process Methods 0.000 abstract 2
238000000034 method Methods 0.000 abstract 2
XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 abstract 1
238000000137 annealing Methods 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic

Landscapes

Bipolar Transistors (AREA)
Bipolar Integrated Circuits (AREA)

JP55152065A 1980-10-31 1980-10-31 Semiconductor device Pending JPS5776872A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP55152065A JPS5776872A (en)	1980-10-31	1980-10-31	Semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP55152065A JPS5776872A (en)	1980-10-31	1980-10-31	Semiconductor device

Publications (1)

Publication Number	Publication Date
JPS5776872A true JPS5776872A (en)	1982-05-14

Family

ID=15532285

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP55152065A Pending JPS5776872A (en)	1980-10-31	1980-10-31	Semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS5776872A (ja)

1980
- 1980-10-31 JP JP55152065A patent/JPS5776872A/ja active Pending

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