JPS5796333A - Production of substrate for exposure of charged beam - Google Patents

Production of substrate for exposure of charged beam

Info

Publication number
JPS5796333A
JPS5796333A JP55172677A JP17267780A JPS5796333A JP S5796333 A JPS5796333 A JP S5796333A JP 55172677 A JP55172677 A JP 55172677A JP 17267780 A JP17267780 A JP 17267780A JP S5796333 A JPS5796333 A JP S5796333A
Authority
JP
Japan
Prior art keywords
exposure
resist
substrate
charged beam
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55172677A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033379B2 (fr
Inventor
Nobuyuki Yasutake
Yasutaka Ban
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55172677A priority Critical patent/JPS5796333A/ja
Publication of JPS5796333A publication Critical patent/JPS5796333A/ja
Publication of JPH033379B2 publication Critical patent/JPH033379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
JP55172677A 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam Granted JPS5796333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55172677A JPS5796333A (en) 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55172677A JPS5796333A (en) 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam

Publications (2)

Publication Number Publication Date
JPS5796333A true JPS5796333A (en) 1982-06-15
JPH033379B2 JPH033379B2 (fr) 1991-01-18

Family

ID=15946314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55172677A Granted JPS5796333A (en) 1980-12-09 1980-12-09 Production of substrate for exposure of charged beam

Country Status (1)

Country Link
JP (1) JPS5796333A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143828A (en) * 1981-03-02 1982-09-06 Fujitsu Ltd Method of pattern formation
JPS6074521A (ja) * 1983-09-30 1985-04-26 Toshiba Corp パタ−ン形成方法
JPS6320830A (ja) * 1986-07-14 1988-01-28 Toshiba Corp 微細加工方法
JPS63204724A (ja) * 1987-02-20 1988-08-24 Matsushita Electronics Corp レジストパタ−ンの形成方法
JPH0210354A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd パターン形成方法
JPH0229653A (ja) * 1988-07-19 1990-01-31 Matsushita Electron Corp レジストパターンの形成方法
US5441849A (en) * 1988-07-11 1995-08-15 Hitachi, Ltd. Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231742A (en) * 1973-02-12 1977-03-10 Rca Corp Electronic beam recorder
JPS5446479A (en) * 1977-09-20 1979-04-12 Mitsubishi Electric Corp Negative plate for photo mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231742A (en) * 1973-02-12 1977-03-10 Rca Corp Electronic beam recorder
JPS5446479A (en) * 1977-09-20 1979-04-12 Mitsubishi Electric Corp Negative plate for photo mask

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57143828A (en) * 1981-03-02 1982-09-06 Fujitsu Ltd Method of pattern formation
JPS6074521A (ja) * 1983-09-30 1985-04-26 Toshiba Corp パタ−ン形成方法
JPS6320830A (ja) * 1986-07-14 1988-01-28 Toshiba Corp 微細加工方法
JPS63204724A (ja) * 1987-02-20 1988-08-24 Matsushita Electronics Corp レジストパタ−ンの形成方法
JPH0210354A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd パターン形成方法
US5441849A (en) * 1988-07-11 1995-08-15 Hitachi, Ltd. Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer
JPH0229653A (ja) * 1988-07-19 1990-01-31 Matsushita Electron Corp レジストパターンの形成方法

Also Published As

Publication number Publication date
JPH033379B2 (fr) 1991-01-18

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