JPS5796551A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5796551A JPS5796551A JP17352380A JP17352380A JPS5796551A JP S5796551 A JPS5796551 A JP S5796551A JP 17352380 A JP17352380 A JP 17352380A JP 17352380 A JP17352380 A JP 17352380A JP S5796551 A JPS5796551 A JP S5796551A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- metal film
- lifting
- thermal processing
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 7
- 239000002184 metal Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 abstract 2
- 238000005336 cracking Methods 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an electrode wiring with high yield by a method wherein two steps of thermal processing are provided in a lifting-off method, so that the lifting-off can be performed even when a metal film on a side of a photoresist is thick such as the film made by sputtering. CONSTITUTION:A photoresist layer 32 of approximately 2mum thickness is formed on a semiconductor substrate 31. Then a photoresist pattern 33 is formed by a photomask and the solvent component of the photoresist is eliminated by the first thermal processing. Then a metal film 34 of a required thickness (4,000Angstrom when the photoresist thickness is approximately 2.5mum) is formed on the whole surface of the substrate by sputtering and the second thermal processing is performed under the conditions such as processing at 150-250 deg.C for 20-60min. With above method many crackings 35 are produced in the metal film on the side of the photoresist pattern. When the substrate is immersed in trichloroethylene at 60-80 deg.C, the trichloroethylene infiltrates into the photoresist pattern 33 through the crackings 35 and make the photresist swell so as to make lifting-off easy. Then excessive portions such as excessive metal film are removed and the required electrode wiring can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17352380A JPS5796551A (en) | 1980-12-09 | 1980-12-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17352380A JPS5796551A (en) | 1980-12-09 | 1980-12-09 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5796551A true JPS5796551A (en) | 1982-06-15 |
| JPS6258542B2 JPS6258542B2 (en) | 1987-12-07 |
Family
ID=15962097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17352380A Granted JPS5796551A (en) | 1980-12-09 | 1980-12-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5796551A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60120539A (en) * | 1983-11-30 | 1985-06-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming conductor pattern |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5394184A (en) * | 1977-01-28 | 1978-08-17 | Fujitsu Ltd | Pattern forming method by lift-off |
-
1980
- 1980-12-09 JP JP17352380A patent/JPS5796551A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5394184A (en) * | 1977-01-28 | 1978-08-17 | Fujitsu Ltd | Pattern forming method by lift-off |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60120539A (en) * | 1983-11-30 | 1985-06-28 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of forming conductor pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258542B2 (en) | 1987-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5240969A (en) | Process for production of semiconductor device | |
| JPS5796551A (en) | Manufacture of semiconductor device | |
| JPS5591130A (en) | Production of semiconductor device | |
| JPS54103694A (en) | Production of transparent conductive film patterns of liquid crystal panel | |
| JPS5559741A (en) | Preparation of semiconductor device | |
| JPS5437581A (en) | Wafer etching device | |
| JPS5568655A (en) | Manufacturing method of wiring | |
| JPS5493971A (en) | Production of semiconductor device | |
| JPS5493970A (en) | Patttern forming method of multi-layer metallic thin film | |
| JPS559415A (en) | Semiconductor manufacturing method | |
| JPS5797629A (en) | Manufacture of semiconductor device | |
| JPS5679451A (en) | Production of semiconductor device | |
| JPS5483771A (en) | Manufacture of semiconductor device | |
| JPS6484224A (en) | Electrode forming method | |
| JPS5492265A (en) | Production of thermal head | |
| JPS55130148A (en) | Forming method of bump electrode | |
| JPS5494880A (en) | Circuit pattern forming method of semiconductor device | |
| JPS5466348A (en) | Forming method for metal film | |
| JPS5226169A (en) | Photoetching method of silicone oxide layer | |
| JPS5544767A (en) | Formation of electrode pattern | |
| JPS5585030A (en) | Forming method for electrode of semiconductor device | |
| JPS5612743A (en) | Processing method of projection for conductive layer of substrate | |
| JPS53112054A (en) | Gas discharging panel | |
| JPS5527662A (en) | Method of manufacturing semiconductor device | |
| JPS5491054A (en) | Manufacture of semiconductor device |