JPS58108229A - ポリイミド系樹脂膜の選択エツチング方法 - Google Patents

ポリイミド系樹脂膜の選択エツチング方法

Info

Publication number
JPS58108229A
JPS58108229A JP56205326A JP20532681A JPS58108229A JP S58108229 A JPS58108229 A JP S58108229A JP 56205326 A JP56205326 A JP 56205326A JP 20532681 A JP20532681 A JP 20532681A JP S58108229 A JPS58108229 A JP S58108229A
Authority
JP
Japan
Prior art keywords
etching
polyimide resin
film
resin film
ketone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56205326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219972B2 (2
Inventor
Atsushi Saiki
斉木　篤
Takao Iwayagi
岩柳　隆夫
Saburo Nonogaki
野々垣　三郎
Takashi Nishida
西田　高
Yukiyoshi Harada
原田　征喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56205326A priority Critical patent/JPS58108229A/ja
Priority to US06/445,576 priority patent/US4436583A/en
Priority to EP82111392A priority patent/EP0082417B1/en
Priority to DE8282111392T priority patent/DE3279554D1/de
Priority to KR8205640A priority patent/KR900003253B1/ko
Publication of JPS58108229A publication Critical patent/JPS58108229A/ja
Publication of JPH0219972B2 publication Critical patent/JPH0219972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56205326A 1981-12-21 1981-12-21 ポリイミド系樹脂膜の選択エツチング方法 Granted JPS58108229A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56205326A JPS58108229A (ja) 1981-12-21 1981-12-21 ポリイミド系樹脂膜の選択エツチング方法
US06/445,576 US4436583A (en) 1981-12-21 1982-11-30 Selective etching method of polyimide type resin film
EP82111392A EP0082417B1 (en) 1981-12-21 1982-12-09 Selective etching method of polyimide type resin film
DE8282111392T DE3279554D1 (en) 1981-12-21 1982-12-09 Selective etching method of polyimide type resin film
KR8205640A KR900003253B1 (ko) 1981-12-21 1982-12-16 폴리이미드(polyimide)계(系) 수지막의 선택 엣칭(etching)방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56205326A JPS58108229A (ja) 1981-12-21 1981-12-21 ポリイミド系樹脂膜の選択エツチング方法

Publications (2)

Publication Number Publication Date
JPS58108229A true JPS58108229A (ja) 1983-06-28
JPH0219972B2 JPH0219972B2 (2) 1990-05-07

Family

ID=16505075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56205326A Granted JPS58108229A (ja) 1981-12-21 1981-12-21 ポリイミド系樹脂膜の選択エツチング方法

Country Status (5)

Country Link
US (1) US4436583A (2)
EP (1) EP0082417B1 (2)
JP (1) JPS58108229A (2)
KR (1) KR900003253B1 (2)
DE (1) DE3279554D1 (2)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664962A (en) * 1985-04-08 1987-05-12 Additive Technology Corporation Printed circuit laminate, printed circuit board produced therefrom, and printed circuit process therefor
US4908096A (en) * 1988-06-24 1990-03-13 Allied-Signal Inc. Photodefinable interlevel dielectrics
US5242713A (en) * 1988-12-23 1993-09-07 International Business Machines Corporation Method for conditioning an organic polymeric material
US5208066A (en) * 1989-03-18 1993-05-04 Hitachi, Ltd. Process of forming a patterned polyimide film and articles including such a film
US4911786A (en) * 1989-04-26 1990-03-27 International Business Machines Corporation Method of etching polyimides and resulting passivation structure
US5183534A (en) * 1990-03-09 1993-02-02 Amoco Corporation Wet-etch process and composition
US5470693A (en) * 1992-02-18 1995-11-28 International Business Machines Corporation Method of forming patterned polyimide films
KR0126792B1 (ko) * 1994-04-11 1998-04-01 김광호 폴리이미드(Polyimide) 표면 처리방법
US5441815A (en) * 1994-08-29 1995-08-15 Industrial Technology Research Institute Process for producing easily removable polyimide resin film
TW535454B (en) * 1999-10-21 2003-06-01 Semiconductor Energy Lab Electro-optical device
US6713587B2 (en) 2001-03-08 2004-03-30 Ppg Industries Ohio, Inc. Electrodepositable dielectric coating compositions and methods related thereto
US6951707B2 (en) * 2001-03-08 2005-10-04 Ppg Industries Ohio, Inc. Process for creating vias for circuit assemblies
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
US20060213685A1 (en) * 2002-06-27 2006-09-28 Wang Alan E Single or multi-layer printed circuit board with improved edge via design
EP1520454B1 (en) * 2002-06-27 2012-01-25 PPG Industries Ohio, Inc. Single or multi-layer printed circuit board with extended breakaway tabs and method of manufacture thereof
US6824959B2 (en) * 2002-06-27 2004-11-30 Ppg Industries Ohio, Inc. Process for creating holes in polymeric substrates
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
KR20130012376A (ko) * 2011-07-25 2013-02-04 삼성전자주식회사 반도체 발광소자 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833436A (en) 1972-09-05 1974-09-03 Buckbee Mears Co Etching of polyimide films
JPS5222071A (en) * 1975-08-13 1977-02-19 Hitachi Ltd Method of selective etching of film of polyamide resin
US4349619A (en) * 1979-09-19 1982-09-14 Japan Synthetic Rubber Co., Ltd. Photoresist composition
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern

Also Published As

Publication number Publication date
KR900003253B1 (ko) 1990-05-12
EP0082417A3 (en) 1986-03-26
EP0082417A2 (en) 1983-06-29
KR840003145A (ko) 1984-08-13
JPH0219972B2 (2) 1990-05-07
US4436583A (en) 1984-03-13
EP0082417B1 (en) 1989-03-15
DE3279554D1 (en) 1989-04-20

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