JPS5811112B2 - substrate - Google Patents

substrate

Info

Publication number
JPS5811112B2
JPS5811112B2 JP53132356A JP13235678A JPS5811112B2 JP S5811112 B2 JPS5811112 B2 JP S5811112B2 JP 53132356 A JP53132356 A JP 53132356A JP 13235678 A JP13235678 A JP 13235678A JP S5811112 B2 JPS5811112 B2 JP S5811112B2
Authority
JP
Japan
Prior art keywords
glass layer
layer
substrate
molten glass
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53132356A
Other languages
Japanese (ja)
Other versions
JPS5558372A (en
Inventor
水野谷信幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP53132356A priority Critical patent/JPS5811112B2/en
Publication of JPS5558372A publication Critical patent/JPS5558372A/en
Publication of JPS5811112B2 publication Critical patent/JPS5811112B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Description

【発明の詳細な説明】 本発明は金属基体を用いた基板に関する。[Detailed description of the invention] The present invention relates to a substrate using a metal base.

配線基板や面ヒータなどに用いられる基板において、放
熱性、機械強度などの点で有利であるところからニッケ
ルー鉄系合金などの金属からなる基体が使用されており
、この金属基体の場合には絶縁を図るために基体主面上
に絶縁層としてガラス層を形成し、このガラス層上に配
線部材を形成することになる。
Substrates made of metals such as nickel-iron alloys are used for substrates used in wiring boards and surface heaters because of their advantages in terms of heat dissipation and mechanical strength. In order to achieve this, a glass layer is formed as an insulating layer on the main surface of the substrate, and wiring members are formed on this glass layer.

しかして、金属基体の主面にガラス層を形成する場合に
、接合強度の点から基体主面上に酸化処理を施して酸化
層を形成し、この酸化層を介してガラス層を形成するこ
とによりガラス層の接合強度を高める必要がある。
Therefore, when forming a glass layer on the main surface of a metal substrate, from the viewpoint of bonding strength, it is necessary to perform oxidation treatment on the main surface of the substrate to form an oxidized layer, and then form the glass layer through this oxidized layer. Therefore, it is necessary to increase the bonding strength of the glass layers.

すなわち、ガラス層が酸化層の凹凸部分に喰込んで強固
に接合できるものである。
That is, the glass layer bites into the uneven portion of the oxide layer and can be firmly bonded.

そして、例えば薄膜法により発熱抵抗体などの配線部材
を形成する場合には(焼成を必要としないことから)溶
融ガラスからなるガラス層を形成している。
For example, when forming a wiring member such as a heat generating resistor by a thin film method (since firing is not required), a glass layer made of molten glass is formed.

しかるに、基体主面の酸化層上に溶融ガラスを塗布する
と、酸化層の凹凸部分がガラス層表面に直接影響を与え
て、ガラス層の表面に凹凸部分が生じて平滑とならない
However, when molten glass is applied onto the oxide layer on the main surface of the substrate, the uneven portions of the oxide layer directly affect the surface of the glass layer, causing uneven portions on the surface of the glass layer and making it not smooth.

このため、ガラス層表面上での配線部材の形成および他
の物体との接触の上で支障をきたしており、従って従来
の金属基体を用いた基板は実用的価値が低かった。
This poses a problem in the formation of wiring members on the surface of the glass layer and in contact with other objects, and therefore, conventional substrates using metal substrates have low practical value.

本発明は前記事情に鑑みてなされ、ガラス層表面の平滑
化を図ることに加えて耐電圧を増大して実用価値を高め
た金属基体使用の基板を提供するものである。
The present invention has been made in view of the above-mentioned circumstances, and provides a substrate using a metal base, which has a smooth glass layer surface and has an increased withstand voltage, thereby increasing its practical value.

すなわち、本発明の基板は主面上に酸化層を形成した金
属基体と、この金属基体の主面上に形成した結晶化ガラ
ス層と、この結晶化ガラス層上に形成した溶融ガラス層
とよりなることを特徴とするものである。
That is, the substrate of the present invention includes a metal base having an oxide layer formed on the main surface, a crystallized glass layer formed on the main surface of the metal base, and a molten glass layer formed on the crystallized glass layer. It is characterized by:

以下本発明について説明する。The present invention will be explained below.

図において1は金属基体で、この金属基体1はたとえば
鉄−ニッケル合金、鉄−クロム、鉄−ニッケルーコバル
ト、鉄−ニッケルークロムなどの熱膨張係数がガラスと
近似した金属からなっている。
In the figure, reference numeral 1 denotes a metal base, and the metal base 1 is made of a metal having a thermal expansion coefficient similar to that of glass, such as iron-nickel alloy, iron-chromium, iron-nickel-cobalt, or iron-nickel-chromium.

金属基体1の厚みは0.1〜2.0mmである。金属基
体1の主面には酸化処理を施して酸化層2が形成しであ
る。
The thickness of the metal base 1 is 0.1 to 2.0 mm. The main surface of the metal base 1 is subjected to oxidation treatment to form an oxide layer 2.

酸化処理はたとえば大気中で温度800〜1200℃で
加熱する、温潤水素雰囲気中で温度800〜1200℃
で加熱するなどの方法がある。
For example, oxidation treatment is performed by heating at a temperature of 800 to 1200°C in the air, or by heating at a temperature of 800 to 1200°C in a warm hydrogen atmosphere.
There are methods such as heating.

金属基体1の主面上には酸化層2を介して結晶化ガラス
層3が形成しである。
A crystallized glass layer 3 is formed on the main surface of the metal base 1 with an oxide layer 2 interposed therebetween.

この結晶化ガラス層3はAl2O3,S10□、B2O
3゜PbO,TiO2などのガラスからなっており、厚
膜法(印刷法)により厚み10〜30μで形成した後に
温度800〜900℃で焼成したものである。
This crystallized glass layer 3 is made of Al2O3, S10□, B2O
It is made of glass such as 3°PbO, TiO2, etc., and is formed to a thickness of 10 to 30 μm by a thick film method (printing method) and then fired at a temperature of 800 to 900°C.

結晶化ガラス層3は一定厚みをもって表面が(酸化層2
に影響されずに)平滑となっており、且つf面は結晶が
酸化層2と組合さって強固に接合している。
The crystallized glass layer 3 has a certain thickness and the surface (oxidized layer 2
The f-plane is smooth (without being affected by the oxidation layer 2), and the crystals on the f-plane combine with the oxide layer 2 and are firmly bonded.

結晶化ガラス層3の表面上には溶融ガラス層4が形成さ
れている。
A molten glass layer 4 is formed on the surface of the crystallized glass layer 3.

この溶融ガラス層4はAl2O3,5i02.B2O3
,PbO,などのガラスからなっており、厚膜法により
厚み30〜100μで形成した後温度800〜900C
で焼成したものである。
This molten glass layer 4 is made of Al2O3,5i02. B2O3
, PbO, etc., and is formed to a thickness of 30 to 100μ by the thick film method and then heated to a temperature of 800 to 900C.
It was fired in

溶融ガラス層4は結晶化ガラス層3の平滑な表面上に一
定厚みで形成しであるため、その表面も平滑となってい
る。
Since the molten glass layer 4 is formed with a constant thickness on the smooth surface of the crystallized glass layer 3, its surface is also smooth.

なお、溶融ガラス層4の表面上には必要に応じて例えば
薄膜法により配線部材を形成する。
Note that a wiring member is formed on the surface of the molten glass layer 4 by, for example, a thin film method, if necessary.

しかして、このように構成された基板は、金属基体1主
面の酸化層2上に平滑な表面が得られる結晶化ガラス層
3を形成し、この結晶化ガラス層3上に溶融ガラス層4
を形成したものであるから溶融ガラス層4表面は酸化層
2に影響されずに平滑となる。
Thus, in the substrate configured in this way, a crystallized glass layer 3 having a smooth surface is formed on the oxide layer 2 on the main surface of the metal base 1, and a molten glass layer 4 is formed on this crystallized glass layer 3.
The surface of the molten glass layer 4 is not affected by the oxide layer 2 and becomes smooth.

このため、溶融ガラス層4の表面上には良好に配線部材
を形成することができ、表面が他の物体と接触して損耗
することがない。
Therefore, a wiring member can be formed satisfactorily on the surface of the molten glass layer 4, and the surface will not be damaged due to contact with other objects.

また、溶融ガラス層4を形成する時に溶融ガラスの一部
が結晶ガラス層3の結晶間隙に浸透して焼成により一体
的に固化するので、結晶化ガラス層3および溶融ガラス
層4が一体化して全体の厚み方向の耐電圧が増大する。
Further, when forming the molten glass layer 4, a part of the molten glass penetrates into the crystal gaps of the crystalline glass layer 3 and is solidified integrally by firing, so that the crystallized glass layer 3 and the molten glass layer 4 are integrated. The withstand voltage in the overall thickness direction increases.

溶融ガラス層4のみでは耐電圧は小さく、溶融ガラス層
4に結晶化ガラス層3を加えることによって耐電圧を増
大させることができる。
With only the molten glass layer 4, the withstand voltage is low, and by adding the crystallized glass layer 3 to the molten glass layer 4, the withstand voltage can be increased.

従って、ガラス層表面を平滑化するとともにガラス層の
耐電圧を増大することにより、金属基体を用いた基板の
実用的価値を高めることができる。
Therefore, by smoothing the surface of the glass layer and increasing the withstand voltage of the glass layer, the practical value of a substrate using a metal base can be increased.

なお、この基板は配線部材を形成せずそのままで使用す
るか、または用途に応じて溶融ガラス層上に導体、抵抗
体などの配線部材を形成して感熱ヘッド、面状ヒータな
どの配線基板として使用することができる。
This board can be used as it is without forming any wiring members, or it can be used as a wiring board for thermal heads, sheet heaters, etc. by forming wiring members such as conductors and resistors on the molten glass layer depending on the application. can be used.

次に実施例について述べる。Next, examples will be described.

鉄−18%ニッケル合金からなる厚み0.75μの金属
基体の主面上に酸化層を形成し、この主面上に厚み20
μの結晶化ガラス層を形成し、この結晶化ガラス層上に
厚み70μの溶融ガラス層を形成した。
An oxide layer is formed on the main surface of a metal substrate with a thickness of 0.75μ made of an iron-18% nickel alloy, and an oxide layer with a thickness of 20μ is formed on the main surface.
A layer of crystallized glass having a thickness of μ was formed, and a molten glass layer having a thickness of 70 μ was formed on this crystallized glass layer.

溶融ガラス層の表面は極めて平滑であり、全体の耐電圧
はIKV以上/100μであって大変大きいものであっ
た。
The surface of the molten glass layer was extremely smooth, and the overall withstand voltage was IKV or more/100μ, which was very large.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の基板の一実施例を示す断面図である。 1・・・・・・金属基体、2・・・・・・酸化層、3・
・・・・・結晶化ガラス層、4・・・・・・溶融ガラス
層。
The figure is a sectional view showing an embodiment of the substrate of the present invention. 1...Metal base, 2...Oxide layer, 3.
...Crystallized glass layer, 4... Molten glass layer.

Claims (1)

【特許請求の範囲】[Claims] 1 主面上に酸化層を形成した金層基体と、この金層基
体の主面上に形成した結晶化ガラス層と、この結晶化ガ
ラス層上に形成した溶融ガラス層とよりなることを特徴
とする基板。
1. Consisting of a gold layer substrate with an oxide layer formed on the main surface, a crystallized glass layer formed on the main surface of the gold layer substrate, and a molten glass layer formed on the crystallized glass layer. board.
JP53132356A 1978-10-27 1978-10-27 substrate Expired JPS5811112B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53132356A JPS5811112B2 (en) 1978-10-27 1978-10-27 substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53132356A JPS5811112B2 (en) 1978-10-27 1978-10-27 substrate

Publications (2)

Publication Number Publication Date
JPS5558372A JPS5558372A (en) 1980-05-01
JPS5811112B2 true JPS5811112B2 (en) 1983-03-01

Family

ID=15079439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53132356A Expired JPS5811112B2 (en) 1978-10-27 1978-10-27 substrate

Country Status (1)

Country Link
JP (1) JPS5811112B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018994A (en) * 1983-07-13 1985-01-31 日立化成工業株式会社 Method of producing porcelain substrate for printed circuit board
JPS6045458U (en) * 1983-09-07 1985-03-30 株式会社フジクラ enameled printed circuit board
JPS6347957A (en) * 1986-08-15 1988-02-29 Sumitomo Special Metals Co Ltd Laminated substrate for electronic component
JPS6347956A (en) * 1986-08-15 1988-02-29 Sumitomo Special Metals Co Ltd Laminated substrate for electronic component

Also Published As

Publication number Publication date
JPS5558372A (en) 1980-05-01

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