JPS59105804A - 半導体用反応性気体精製方法 - Google Patents
半導体用反応性気体精製方法Info
- Publication number
- JPS59105804A JPS59105804A JP57217570A JP21757082A JPS59105804A JP S59105804 A JPS59105804 A JP S59105804A JP 57217570 A JP57217570 A JP 57217570A JP 21757082 A JP21757082 A JP 21757082A JP S59105804 A JPS59105804 A JP S59105804A
- Authority
- JP
- Japan
- Prior art keywords
- reactive gas
- container
- silane
- gas
- semiconductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217570A JPS59105804A (ja) | 1982-12-11 | 1982-12-11 | 半導体用反応性気体精製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217570A JPS59105804A (ja) | 1982-12-11 | 1982-12-11 | 半導体用反応性気体精製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59105804A true JPS59105804A (ja) | 1984-06-19 |
| JPS6328645B2 JPS6328645B2 (cs) | 1988-06-09 |
Family
ID=16706334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57217570A Granted JPS59105804A (ja) | 1982-12-11 | 1982-12-11 | 半導体用反応性気体精製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59105804A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162119A (ja) * | 1983-03-03 | 1984-09-13 | Semiconductor Energy Lab Co Ltd | 気相反応用シラン精製方法 |
| CN102628546A (zh) * | 2012-04-17 | 2012-08-08 | 南京特种气体厂有限公司 | 硅烷纯化与灌装用冷阱系统 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57122904A (en) * | 1981-01-23 | 1982-07-31 | Toshiba Corp | Removal of accumulated substance in cold trap apparatus |
-
1982
- 1982-12-11 JP JP57217570A patent/JPS59105804A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57122904A (en) * | 1981-01-23 | 1982-07-31 | Toshiba Corp | Removal of accumulated substance in cold trap apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162119A (ja) * | 1983-03-03 | 1984-09-13 | Semiconductor Energy Lab Co Ltd | 気相反応用シラン精製方法 |
| CN102628546A (zh) * | 2012-04-17 | 2012-08-08 | 南京特种气体厂有限公司 | 硅烷纯化与灌装用冷阱系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328645B2 (cs) | 1988-06-09 |
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