JPS59193065A - トランジスタ装置 - Google Patents

トランジスタ装置

Info

Publication number
JPS59193065A
JPS59193065A JP58067199A JP6719983A JPS59193065A JP S59193065 A JPS59193065 A JP S59193065A JP 58067199 A JP58067199 A JP 58067199A JP 6719983 A JP6719983 A JP 6719983A JP S59193065 A JPS59193065 A JP S59193065A
Authority
JP
Japan
Prior art keywords
well
electrode
wells
substrate
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58067199A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041509B2 (da
Inventor
Yoshimitsu Tanaka
義光 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP58067199A priority Critical patent/JPS59193065A/ja
Publication of JPS59193065A publication Critical patent/JPS59193065A/ja
Publication of JPH041509B2 publication Critical patent/JPH041509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/837—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising vertical IGFETs
JP58067199A 1983-04-15 1983-04-15 トランジスタ装置 Granted JPS59193065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58067199A JPS59193065A (ja) 1983-04-15 1983-04-15 トランジスタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58067199A JPS59193065A (ja) 1983-04-15 1983-04-15 トランジスタ装置

Publications (2)

Publication Number Publication Date
JPS59193065A true JPS59193065A (ja) 1984-11-01
JPH041509B2 JPH041509B2 (da) 1992-01-13

Family

ID=13337992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58067199A Granted JPS59193065A (ja) 1983-04-15 1983-04-15 トランジスタ装置

Country Status (1)

Country Link
JP (1) JPS59193065A (da)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021182211A1 (da) * 2020-03-13 2021-09-16

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021182211A1 (da) * 2020-03-13 2021-09-16
WO2021182211A1 (ja) * 2020-03-13 2021-09-16 ローム株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH041509B2 (da) 1992-01-13

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