JPS5952548B2 - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number: JPS5952548B2
Authority: JP; Japan
Prior art keywords: capacitor; data; gate; volatile; voltage
Prior art date: 1982-02-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP57222198A

Other languages

English (en)

Japanese (ja)

Other versions

JPS58142565A (ja

Inventor

チヤ−ルズ・リ−ブス・ホフマン

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-02-19

Filing date

1982-12-20

Publication date

1984-12-20

1982-12-20 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1983-08-24 Publication of JPS58142565A publication Critical patent/JPS58142565A/ja

1984-12-20 Publication of JPS5952548B2 publication Critical patent/JPS5952548B2/ja

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 4
230000015654 memory Effects 0.000 claims description 49
238000002955 isolation Methods 0.000 claims 1
210000004027 cell Anatomy 0.000 description 58
239000003990 capacitor Substances 0.000 description 57
229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
229920005591 polysilicon Polymers 0.000 description 20
239000000463 material Substances 0.000 description 19
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
238000013500 data storage Methods 0.000 description 7
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
238000010586 diagram Methods 0.000 description 6
238000009792 diffusion process Methods 0.000 description 5
238000000034 method Methods 0.000 description 5
238000011084 recovery Methods 0.000 description 5
239000000758 substrate Substances 0.000 description 4
229910052681 coesite Inorganic materials 0.000 description 3
229910052906 cristobalite Inorganic materials 0.000 description 3
238000002347 injection Methods 0.000 description 3
239000007924 injection Substances 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
229910052682 stishovite Inorganic materials 0.000 description 3
210000000352 storage cell Anatomy 0.000 description 3
229910052905 tridymite Inorganic materials 0.000 description 3
230000009977 dual effect Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000002513 implantation Methods 0.000 description 2
238000009413 insulation Methods 0.000 description 2
230000003068 static effect Effects 0.000 description 2
239000003989 dielectric material Substances 0.000 description 1
238000007599 discharging Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
239000007943 implant Substances 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
230000000737 periodic effect Effects 0.000 description 1
230000000284 resting effect Effects 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

Non-Volatile Memory (AREA)
Dram (AREA)
Static Random-Access Memory (AREA)
Read Only Memory (AREA)
Semiconductor Memories (AREA)

JP57222198A 1982-02-19 1982-12-20 半導体メモリ装置 Expired JPS5952548B2 (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US350479		1982-02-19
US06/350,479 US4449205A (en)	1982-02-19	1982-02-19	Dynamic RAM with non-volatile back-up storage and method of operation thereof

Publications (2)

Publication Number	Publication Date
JPS58142565A JPS58142565A (ja)	1983-08-24
JPS5952548B2 true JPS5952548B2 (ja)	1984-12-20

Family

ID=23376898

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP57222198A Expired JPS5952548B2 (ja)	1982-02-19	1982-12-20	半導体メモリ装置

Country Status (4)

Country	Link
US (1)	US4449205A (fr)
EP (1)	EP0087007B1 (fr)
JP (1)	JPS5952548B2 (fr)
DE (1)	DE3381698D1 (fr)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4630238A (en) *	1983-10-14	1986-12-16	Fujitsu Limited	Semiconductor memory device
US4729115A (en) *	1984-09-27	1988-03-01	International Business Machines Corporation	Non-volatile dynamic random access memory cell
US4665417A (en) *	1984-09-27	1987-05-12	International Business Machines Corporation	Non-volatile dynamic random access memory cell
JPS6180866A (ja) *	1984-09-27	1986-04-24	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	不揮発性半導体メモリ・セル
US4701858A (en) *	1984-12-31	1987-10-20	Energy Optics Inc.	Nonvolatile realtime clock calendar module
CA1269178A (fr) *	1987-01-30	1990-05-15	John David Morton	Regeneration automatique des parametres de fonctionnement du materiel a memoire non remanente
JPH027289A (ja) *	1988-06-24	1990-01-11	Sharp Corp	半導体記憶装置
US7190617B1 (en)	1989-04-13	2007-03-13	Sandisk Corporation	Flash EEprom system
DE69024086T2 (de)	1989-04-13	1996-06-20	Sundisk Corp	EEprom-System mit Blocklöschung
JP2609332B2 (ja) *	1989-10-19	1997-05-14	シャープ株式会社	半導体記憶装置
US5157634A (en) *	1990-10-23	1992-10-20	International Business Machines Corporation	Dram having extended refresh time
US5399516A (en) *	1992-03-12	1995-03-21	International Business Machines Corporation	Method of making shadow RAM cell having a shallow trench EEPROM
US5339270A (en) *	1993-06-23	1994-08-16	Vlsi Technology, Inc.	AC drain voltage charging source for PROM devices
US6696712B1 (en) *	2000-08-11	2004-02-24	Seiko Epson Corporation	Semicustom IC having adjacent macrocells
US6496939B2 (en) *	1999-09-21	2002-12-17	Bit Microsystems, Inc.	Method and system for controlling data in a computer system in the event of a power failure
US7135734B2 (en) *	2001-08-30	2006-11-14	Micron Technology, Inc.	Graded composition metal oxide tunnel barrier interpoly insulators
US7068544B2 (en)	2001-08-30	2006-06-27	Micron Technology, Inc.	Flash memory with low tunnel barrier interpoly insulators
US7012297B2 (en) *	2001-08-30	2006-03-14	Micron Technology, Inc.	Scalable flash/NV structures and devices with extended endurance
US7075829B2 (en)	2001-08-30	2006-07-11	Micron Technology, Inc.	Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
US7132711B2 (en) *	2001-08-30	2006-11-07	Micron Technology, Inc.	Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers
US6784480B2 (en) *	2002-02-12	2004-08-31	Micron Technology, Inc.	Asymmetric band-gap engineered nonvolatile memory device
US7221586B2 (en)	2002-07-08	2007-05-22	Micron Technology, Inc.	Memory utilizing oxide nanolaminates
US6829166B2 (en)	2002-09-13	2004-12-07	Ememory Technology Inc.	Method for controlling a non-volatile dynamic random access memory
EP1437742A1 (fr) *	2003-01-09	2004-07-14	eMemory Technology Inc.	Méthode de commande d'une mémoire à accès aléatoire dynamique non volatile
US7158410B2 (en) *	2004-08-27	2007-01-02	Micron Technology, Inc.	Integrated DRAM-NVRAM multi-level memory
US8301833B1 (en)	2007-06-01	2012-10-30	Netlist, Inc.	Non-volatile memory module
US8904098B2 (en)	2007-06-01	2014-12-02	Netlist, Inc.	Redundant backup using non-volatile memory
US8874831B2 (en)	2007-06-01	2014-10-28	Netlist, Inc.	Flash-DRAM hybrid memory module
US8064255B2 (en) *	2007-12-31	2011-11-22	Cypress Semiconductor Corporation	Architecture of a nvDRAM array and its sense regime
US8036032B2 (en) *	2007-12-31	2011-10-11	Cypress Semiconductor Corporation	5T high density NVDRAM cell
US8059458B2 (en) *	2007-12-31	2011-11-15	Cypress Semiconductor Corporation	3T high density nvDRAM cell
US8050080B2 (en) *	2008-03-05	2011-11-01	S. Aqua Semiconductor Llc	Random access memory with CMOS-compatible nonvolatile storage element in series with storage capacitor
US8000140B2 (en) *	2008-03-24	2011-08-16	S. Aqua Semiconductor, Llc	Random access memory with CMOS-compatible nonvolatile storage element
US7885110B2 (en) *	2008-03-25	2011-02-08	Rao G R Mohan	Random access memory with CMOS-compatible nonvolatile storage element and parallel storage capacitor
US8283730B2 (en) *	2008-05-27	2012-10-09	Shu-Lu Chen	Negative differential resistance device with high PVCR and fast switching speed and memory using the same
US10198350B2 (en)	2011-07-28	2019-02-05	Netlist, Inc.	Memory module having volatile and non-volatile memory subsystems and method of operation
US10380022B2 (en)	2011-07-28	2019-08-13	Netlist, Inc.	Hybrid memory module and system and method of operating the same
US10838646B2 (en)	2011-07-28	2020-11-17	Netlist, Inc.	Method and apparatus for presearching stored data
US10372551B2 (en)	2013-03-15	2019-08-06	Netlist, Inc.	Hybrid memory system with configurable error thresholds and failure analysis capability
US9436600B2 (en)	2013-06-11	2016-09-06	Svic No. 28 New Technology Business Investment L.L.P.	Non-volatile memory storage for multi-channel memory system
US10248328B2 (en)	2013-11-07	2019-04-02	Netlist, Inc.	Direct data move between DRAM and storage on a memory module
KR20230122430A (ko) *	2022-02-14	2023-08-22	삼성전자주식회사	메모리 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2450116C2 (de) *	1974-10-22	1976-09-16	Siemens AG, 1000 Berlin und 8000 München	Dynamisches Ein-Transistor-Speicherelement für nichtflüchtige Speicher und Verfahren zu seinem Betrieb
US4175291A (en) *	1976-08-16	1979-11-20	Ncr Corporation	Non-volatile random access memory cell

1982
- 1982-02-19 US US06/350,479 patent/US4449205A/en not_active Expired - Lifetime
- 1982-12-20 JP JP57222198A patent/JPS5952548B2/ja not_active Expired
1983
- 1983-02-01 EP EP83100910A patent/EP0087007B1/fr not_active Expired
- 1983-02-01 DE DE8383100910T patent/DE3381698D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0087007A3 (en)	1986-08-27
EP0087007A2 (fr)	1983-08-31
JPS58142565A (ja)	1983-08-24
US4449205A (en)	1984-05-15
EP0087007B1 (fr)	1990-07-04
DE3381698D1 (de)	1990-08-09

Publication	Publication Date	Title
JPS5952548B2 (ja)	1984-12-20	半導体メモリ装置
US5065362A (en)	1991-11-12	Non-volatile ram with integrated compact static ram load configuration
US4432072A (en)	1984-02-14	Non-volatile dynamic RAM cell
US4363110A (en)	1982-12-07	Non-volatile dynamic RAM cell
JPH0237040B2 (fr)	1990-08-22
US9899085B1 (en)	2018-02-20	Non-volatile FeSRAM cell capable of non-destructive read operations
US4799193A (en)	1989-01-17	Semiconductor memory devices
JPS5858759B2 (ja)	1983-12-27	メモリ装置
EP0086991A2 (fr)	1983-08-31	Mémoire RAM statique avec mémoire non-volatile de secours et mode de fonctionnement
US6775176B2 (en)	2004-08-10	Semiconductor memory device having memory cells requiring no refresh operations
US7054201B2 (en)	2006-05-30	Driving circuit for non-volatile DRAM
US4446535A (en)	1984-05-01	Non-inverting non-volatile dynamic RAM cell
JPS6322626B2 (fr)	1988-05-12
US4574365A (en)	1986-03-04	Shared access lines memory cells
JPS59121694A (ja)	1984-07-13	電力散逸を減少させたｍｏｓランダムアクセスメモリ用の交差結合型トランジスタメモリセル
JPS5922317B2 (ja)	1984-05-25	半導体メモリ
JPH0584598B2 (fr)	1993-12-02
CN101494084A (zh)	2009-07-29	非易失性动态随机存取存储设备
JPH05291534A (ja)	1993-11-05	電荷蓄積素子を有する半導体装置
JPS5938674B2 (ja)	1984-09-18	記憶装置
JPH0419637B2 (fr)	1992-03-31
GB2165410A (en)	1986-04-09	Memory cells
JPH031759B2 (fr)	1991-01-11
EP0080415B1 (fr)	1990-10-10	Cellule de mémoire à auto-régénération
JPS6318276B2 (fr)	1988-04-18