JPS5984432A - シリコン基板 - Google Patents
シリコン基板Info
- Publication number
- JPS5984432A JPS5984432A JP57194289A JP19428982A JPS5984432A JP S5984432 A JPS5984432 A JP S5984432A JP 57194289 A JP57194289 A JP 57194289A JP 19428982 A JP19428982 A JP 19428982A JP S5984432 A JPS5984432 A JP S5984432A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- main surface
- concentration
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P36/00—Gettering within semiconductor bodies
- H10P36/03—Gettering within semiconductor bodies within silicon bodies
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194289A JPS5984432A (ja) | 1982-11-05 | 1982-11-05 | シリコン基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194289A JPS5984432A (ja) | 1982-11-05 | 1982-11-05 | シリコン基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984432A true JPS5984432A (ja) | 1984-05-16 |
| JPH0434300B2 JPH0434300B2 (2) | 1992-06-05 |
Family
ID=16322117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57194289A Granted JPS5984432A (ja) | 1982-11-05 | 1982-11-05 | シリコン基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984432A (2) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60245235A (ja) * | 1984-05-21 | 1985-12-05 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| US4885257A (en) * | 1983-07-29 | 1989-12-05 | Kabushiki Kaisha Toshiba | Gettering process with multi-step annealing and inert ion implantation |
| US5227314A (en) * | 1989-03-22 | 1993-07-13 | At&T Bell Laboratories | Method of making metal conductors having a mobile inn getterer therein |
-
1982
- 1982-11-05 JP JP57194289A patent/JPS5984432A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885257A (en) * | 1983-07-29 | 1989-12-05 | Kabushiki Kaisha Toshiba | Gettering process with multi-step annealing and inert ion implantation |
| JPS60245235A (ja) * | 1984-05-21 | 1985-12-05 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| US5227314A (en) * | 1989-03-22 | 1993-07-13 | At&T Bell Laboratories | Method of making metal conductors having a mobile inn getterer therein |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0434300B2 (2) | 1992-06-05 |
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