JPS60201653A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS60201653A
JPS60201653A JP59059117A JP5911784A JPS60201653A JP S60201653 A JPS60201653 A JP S60201653A JP 59059117 A JP59059117 A JP 59059117A JP 5911784 A JP5911784 A JP 5911784A JP S60201653 A JPS60201653 A JP S60201653A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor device
oxide film
capacitor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59059117A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP59059117A priority Critical patent/JPS60201653A/en
Publication of JPS60201653A publication Critical patent/JPS60201653A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive to enhance the degree of integration of a semiconductor device by a method wherein an electric capacitance body is constructed by forming a first electrode uneven part. CONSTITUTION:An uneven part 14, a first electrode 13 consisting of a diffusion layer, field oxide films 12, and a gate oxide film 15 are formed on the surface of an Si substrate 11, and a second electrode 16 is formed on the gate oxide film 15, etc. The unevenness part is not always necessary to be formed in a linear type, and to be formed in a dot type is also favorable. Moreover, it is not necessary to form the first electrode on the surface of the semiconductor substrate, and to form the first electrode on the field oxide film 12 on the semiconductor substrate 11, and to form uneven steps to the first electrode thereof and to be used as the first electrode is also favorable.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は半導体装置に構成される電気容量体の構造に関
する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to the structure of a capacitor constructed in a semiconductor device.

〔従来技術〕[Prior art]

従来、半導体装置における電気容量体の構造は第１図に
示す如く、８１基板１の表面に形成された拡散層を平担
な第１の電極３として、フィールド酸化膜２及びゲート
酸化膜４を介して第２の電極５が形成されて成る。Conventionally, the structure of a capacitor in a semiconductor device is as shown in FIG. A second electrode 5 is formed therebetween.

上記従来技術によると、半導体装置の電気容量体の面積
が大となり、高集積化に向かないという欠点があった。According to the above-mentioned conventional technology, the area of the capacitor of the semiconductor device becomes large, which is disadvantageous in that it is not suitable for high integration.

〔目的〕〔the purpose〕

本発明は、かかる従来技術の欠点をなくシ、小面積で大
電気容量の半導体装置用電気容量・体の構造を提供する
ことを目的とす、る。SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the drawbacks of the prior art and to provide a capacitor/body structure for a semiconductor device that has a small area and a large capacitance.

〔概要〕〔overview〕

上記目的を達成するための本発明の基本的な構成は、半
導体装置に於て、半導体基板上には第１の電極が形成さ
れその表面に２つ以上の凹凸部が形成され、該第１の電
極表面上に絶縁膜を介して第２の電極が形成された電気
容量体を有することを特徴とする。The basic structure of the present invention for achieving the above object is that, in a semiconductor device, a first electrode is formed on a semiconductor substrate, two or more uneven portions are formed on the surface of the first electrode, and the first electrode is formed on the surface of the first electrode. It is characterized by having a capacitor in which a second electrode is formed on the surface of the electrode with an insulating film interposed therebetween.

〔実施例〕〔Example〕

以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第２図は本発明の一実施例を示す半導体基板上の電気容
量体の断面図である。すなわち、８１基板１１の表面に
は凹凸部１４．拡散層からなる第１の電極１！１．フィ
ールド酸化膜１２．ゲート酸化膜１５が形成され、該ゲ
ート酸化膜１５等上に第２の電極１６が形成されて成る
。FIG. 2 is a sectional view of a capacitor on a semiconductor substrate showing an embodiment of the present invention. That is, the surface of the 81 substrate 11 has uneven portions 14. First electrode 1 consisting of a diffusion layer!1. Field oxide film 12. A gate oxide film 15 is formed, and a second electrode 16 is formed on the gate oxide film 15 and the like.

尚、凹凸部は必ずしも線状である必要なく、点状に形成
されても良い。Note that the uneven portions do not necessarily have to be linear, and may be formed in dotted shapes.

更に、第１の電極は半導体基板表面に形成される必要は
なく、半導体基板１１上のフィールド酸化膜１２上に第
１の電極が形成され、該第１の電極に凹凸段を形成した
第１の電極としても良いことは云うまでもない。Further, the first electrode does not need to be formed on the surface of the semiconductor substrate, and the first electrode is formed on the field oxide film 12 on the semiconductor substrate 11, and the first electrode is formed with uneven steps. Needless to say, it can also be used as an electrode.

〔効果〕〔effect〕

本発明の如く電気容量体を第１の電極凹凸部を形成して
構成することにより、半導体装置の集積度が向上できる
効果がある。By configuring the capacitor by forming the first electrode uneven portion as in the present invention, there is an effect that the degree of integration of the semiconductor device can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来技術による半導体装置の電気容量体の断面
図、第２図は本発明の一実施例を示す半導体装置の電気
容量体の断面図である。 １．１１・・・・・・８１基板 ２．１２・・・・・・フィールド酸化膜３．１３…・・
・第１の電極 ４．１５・・・・・・絶縁膜 １４・・・・・・・・・・・・凹凸部 ５．１６・・・・・・第２の電極 以　上 出願人　株式会社睡訪精工舎 代理人　弁理士　最上　務FIG. 1 is a cross-sectional view of a capacitor of a semiconductor device according to the prior art, and FIG. 2 is a cross-sectional view of a capacitor of a semiconductor device showing an embodiment of the present invention. 1.11...81 Substrate 2.12...Field oxide film 3.13...
・First electrode 4.15...Insulating film 14...Irregularities 5.16...Second electrode and above Applicant Co., Ltd. Suiwa Seikosha Agent Patent Attorney Tsutomu Mogami

Claims (1)

【特許請求の範囲】[Claims] 半導体基板上には第１の電極が形成されその表面に２つ
以上の凹凸部が形成され、該第１の電極表面上に絶縁膜
を介して第２の電極が形成された電気容量体を有するこ
とを特徴とする半導体装置A first electrode is formed on a semiconductor substrate, two or more uneven portions are formed on the surface of the capacitor, and a second electrode is formed on the surface of the first electrode with an insulating film interposed therebetween. A semiconductor device characterized by having
JP59059117A 1984-03-27 1984-03-27 Semiconductor device Pending JPS60201653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59059117A JPS60201653A (en) 1984-03-27 1984-03-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59059117A JPS60201653A (en) 1984-03-27 1984-03-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS60201653A true JPS60201653A (en) 1985-10-12

Family

ID=13104048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59059117A Pending JPS60201653A (en) 1984-03-27 1984-03-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS60201653A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017032A1 (en) * 1999-08-27 2001-03-08 Infineon Technologies Ag Capacitor structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017032A1 (en) * 1999-08-27 2001-03-08 Infineon Technologies Ag Capacitor structure

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