JPS6482567A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
JPS6482567A
JPS6482567A JP62241841A JP24184187A JPS6482567A JP S6482567 A JPS6482567 A JP S6482567A JP 62241841 A JP62241841 A JP 62241841A JP 24184187 A JP24184187 A JP 24184187A JP S6482567 A JPS6482567 A JP S6482567A
Authority
JP
Japan
Prior art keywords
epitaxial layer
resistance
conductivity type
substrate
concentration distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62241841A
Other languages
Japanese (ja)
Other versions
JPH0734471B2 (en
Inventor
Hiroyasu Hagino
Hiroshi Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62241841A priority Critical patent/JPH0734471B2/en
Priority to DE3851815T priority patent/DE3851815T2/en
Priority to EP88111722A priority patent/EP0308612B1/en
Publication of JPS6482567A publication Critical patent/JPS6482567A/en
Publication of JPH0734471B2 publication Critical patent/JPH0734471B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce sufficiently ON resistance, by forming a second conductivity type epitaxial layer of high resistance on a second conductivity type substrate of low resistance whose diffusion coefficient is small, constituting a gentle concentration distribution of impurity between the substrate and the epitaxial layer, and making the thickness of the epitaxial layer thin. CONSTITUTION:Between a second coductivity type substrate 21 of low resistance whose diffusion coefficient is small and a second conductivity type epitaxial layer 22 of high resistance, a second conductivity type buffer layer 10 of comparatively low resistance whose diffusion coefficient is large is formed in such a manner as to largely protrude in the epitaxial layer 22 side, and a protruding region 11 is formed to constitute a gentle impurity concentration distribution between the substrate 21 and the epitaxial layer 22. Breakdown voltage is maintained by the gradient of impurity concentration distribution, and the thickness of the epitaxial layer 22 is made about one-half of prior ones. By decreasing resistance REpi, the ON resistance Ron of an element constitution can be sufficiently reduced.
JP62241841A 1987-09-24 1987-09-24 Field effect semiconductor device Expired - Lifetime JPH0734471B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62241841A JPH0734471B2 (en) 1987-09-24 1987-09-24 Field effect semiconductor device
DE3851815T DE3851815T2 (en) 1987-09-24 1988-07-20 Field effect transistor and its manufacturing method.
EP88111722A EP0308612B1 (en) 1987-09-24 1988-07-20 Field effect transistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241841A JPH0734471B2 (en) 1987-09-24 1987-09-24 Field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS6482567A true JPS6482567A (en) 1989-03-28
JPH0734471B2 JPH0734471B2 (en) 1995-04-12

Family

ID=17080297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241841A Expired - Lifetime JPH0734471B2 (en) 1987-09-24 1987-09-24 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPH0734471B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188679A (en) * 1989-12-18 1991-08-16 Matsushita Electron Corp Manufacture of semiconductor device
JP2004312037A (en) * 2001-09-07 2004-11-04 Power Integrations Inc Method of fabricating high voltage transistor having multilayer extended drain structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5236281B2 (en) * 2007-12-27 2013-07-17 ラピスセミコンダクタ株式会社 Manufacturing method of vertical MOSFET

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742164A (en) * 1980-08-27 1982-03-09 Hitachi Ltd Semiconductor device
JPS57153469A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03188679A (en) * 1989-12-18 1991-08-16 Matsushita Electron Corp Manufacture of semiconductor device
JP2004312037A (en) * 2001-09-07 2004-11-04 Power Integrations Inc Method of fabricating high voltage transistor having multilayer extended drain structure

Also Published As

Publication number Publication date
JPH0734471B2 (en) 1995-04-12

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