JPS61117792A - 半導体メモリデバイスの感知増幅器 - Google Patents

半導体メモリデバイスの感知増幅器

Info

Publication number: JPS61117792A
Authority: JP; Japan
Prior art keywords: transistor; pair; voltage; transistors; sense amplifier
Prior art date: 1984-08-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP60168694A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0150037B2 (fr

Inventor

アデイン　イー．ハイスロツプ

シヤーバカ　ドウブリイ

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Texas Instruments Inc

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-08-02

Filing date

1985-08-01

Publication date

1986-06-05

1985-08-01 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

1986-06-05 Publication of JPS61117792A publication Critical patent/JPS61117792A/ja

1989-10-26 Publication of JPH0150037B2 publication Critical patent/JPH0150037B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 14
230000008878 coupling Effects 0.000 claims description 13
238000010168 coupling process Methods 0.000 claims description 13
238000005859 coupling reaction Methods 0.000 claims description 13
230000000295 complement effect Effects 0.000 claims description 11
230000003321 amplification Effects 0.000 claims description 9
238000003199 nucleic acid amplification method Methods 0.000 claims description 9
230000003213 activating effect Effects 0.000 claims description 7
230000004913 activation Effects 0.000 claims description 3
230000000977 initiatory effect Effects 0.000 claims 1
210000004027 cell Anatomy 0.000 description 48
239000003990 capacitor Substances 0.000 description 30
239000000872 buffer Substances 0.000 description 29
238000010586 diagram Methods 0.000 description 22
238000002955 isolation Methods 0.000 description 9
230000006870 function Effects 0.000 description 5
210000000352 storage cell Anatomy 0.000 description 5
230000008901 benefit Effects 0.000 description 3
238000000034 method Methods 0.000 description 3
101000948583 Bacillus subtilis (strain 168) GTP pyrophosphokinase YjbM Proteins 0.000 description 2
101000759355 Bacillus subtilis (strain 168) GTP pyrophosphokinase YwaC Proteins 0.000 description 2
230000002238 attenuated effect Effects 0.000 description 2
239000002131 composite material Substances 0.000 description 2
230000009977 dual effect Effects 0.000 description 2
230000000630 rising effect Effects 0.000 description 2
125000000174 L-prolyl group Chemical group [H]N1C([H])([H])C([H])([H])C([H])([H])[C@@]1([H])C(*)=O 0.000 description 1
230000003915 cell function Effects 0.000 description 1
238000010276 construction Methods 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000007599 discharging Methods 0.000 description 1
235000020095 red wine Nutrition 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000000638 solvent extraction Methods 0.000 description 1

JP60168694A 1984-08-02 1985-08-01 半導体メモリデバイスの感知増幅器 Granted JPS61117792A (ja)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date
US63693884A	1984-08-02	1984-08-02
US636939		1984-08-02
US636938		1984-08-02
US636940		1984-08-02

Publications (2)

Publication Number	Publication Date
JPS61117792A true JPS61117792A (ja)	1986-06-05
JPH0150037B2 JPH0150037B2 (fr)	1989-10-26

Family

ID=24553951

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60168694A Granted JPS61117792A (ja)	1984-08-02	1985-08-01	半導体メモリデバイスの感知増幅器

Country Status (1)

Country	Link
JP (1)	JPS61117792A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03183096A (ja) *	1989-09-08	1991-08-09	Hyundai Electron Ind Co Ltd	センス増幅器用ラッチング回路およびそれを備えたダイナミックランダムアクセスメモリ
JPH08235861A (ja) *	1994-12-20	1996-09-13	Samsung Electron Co Ltd	半導体メモリ装置のビット線感知回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51113545A (en) *	1975-03-31	1976-10-06	Hitachi Ltd	Memory
JPS52152128A (en) *	1976-06-14	1977-12-17	Nippon Telegr & Teleph Corp <Ntt>	Minute signal detection circuit
JPS54112131A (en) *	1978-02-23	1979-09-01	Nec Corp	Sense amplifier circuit of mos memory

1985
- 1985-08-01 JP JP60168694A patent/JPS61117792A/ja active Granted

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51113545A (en) *	1975-03-31	1976-10-06	Hitachi Ltd	Memory
JPS52152128A (en) *	1976-06-14	1977-12-17	Nippon Telegr & Teleph Corp <Ntt>	Minute signal detection circuit
JPS54112131A (en) *	1978-02-23	1979-09-01	Nec Corp	Sense amplifier circuit of mos memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03183096A (ja) *	1989-09-08	1991-08-09	Hyundai Electron Ind Co Ltd	センス増幅器用ラッチング回路およびそれを備えたダイナミックランダムアクセスメモリ
JPH08235861A (ja) *	1994-12-20	1996-09-13	Samsung Electron Co Ltd	半導体メモリ装置のビット線感知回路

Also Published As

Publication number	Publication date
JPH0150037B2 (fr)	1989-10-26

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Legal Events

Date	Code	Title	Description
2005-08-01	EXPY	Cancellation because of completion of term