JPS61166090A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS61166090A
JPS61166090A JP60007255A JP725585A JPS61166090A JP S61166090 A JPS61166090 A JP S61166090A JP 60007255 A JP60007255 A JP 60007255A JP 725585 A JP725585 A JP 725585A JP S61166090 A JPS61166090 A JP S61166090A
Authority
JP
Japan
Prior art keywords
layer
substrate
growth
evaporation
current blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60007255A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519837B2 (cs
Inventor
Haruo Tanaka
田中　治夫
Hayamizu Fukada
深田　速水
Yuuji Ishida
祐士 石田
Naotaro Nakada
直太郎 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP60007255A priority Critical patent/JPS61166090A/ja
Publication of JPS61166090A publication Critical patent/JPS61166090A/ja
Publication of JPH0519837B2 publication Critical patent/JPH0519837B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP60007255A 1985-01-17 1985-01-17 半導体レ−ザの製造方法 Granted JPS61166090A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60007255A JPS61166090A (ja) 1985-01-17 1985-01-17 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60007255A JPS61166090A (ja) 1985-01-17 1985-01-17 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS61166090A true JPS61166090A (ja) 1986-07-26
JPH0519837B2 JPH0519837B2 (cs) 1993-03-17

Family

ID=11660919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60007255A Granted JPS61166090A (ja) 1985-01-17 1985-01-17 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS61166090A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999841A (en) * 1989-01-24 1991-03-12 Rohm Co., Ltd. Semiconductor lasers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999841A (en) * 1989-01-24 1991-03-12 Rohm Co., Ltd. Semiconductor lasers

Also Published As

Publication number Publication date
JPH0519837B2 (cs) 1993-03-17

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Legal Events

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EXPY Cancellation because of completion of term